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Silicon Nanocluster Formation by a Pulse-type Gas Feeding Technique in the LPCVD System for the Nonvolatile Memory Applications

Published online by Cambridge University Press:  01 February 2011

Kyoungmin Kim ,
Eunkyeom Kim ,
Myeongwook Bae ,
Daeho Son ,
Juhyung Lee ,
Moonsup Han ,
Junghyun Sok  and
Kyoungwan Park
Kyoungmin Kim
Affiliation:
kwpark@uos.ac.kr, University of Seoul, Nano Science & Technology, 90 Jeonnongdong Dongdaemungu, Seoul, 130-743, Korea, Republic of
Eunkyeom Kim
Affiliation:
kwpark@uos.ac.kr, University of Seoul, Department of Nano Science & Technology, Seoul, 130-743, Korea, Republic of
Myeongwook Bae
Affiliation:
kwpark@uos.ac.kr, University of Seoul, Department of Physics, Seoul, 130-743, Korea, Republic of
Daeho Son
Affiliation:
kwpark@uos.ac.kr, University of Seoul, Department of Nano Science & Technology, Seoul, 130-743, Korea, Republic of
Juhyung Lee
Affiliation:
kwpark@uos.ac.kr, University of Seoul, Department of Nano Science & Technology, Seoul, 130-743, Korea, Republic of
Moonsup Han
Affiliation:
kwpark@uos.ac.kr, University of Seoul, Department of Physics, Seoul, 130-743, Korea, Republic of
Junghyun Sok
Affiliation:
kwpark@uos.ac.kr, University of Seoul, Department of Nano Science & Technology, Seoul, 130-743, Korea, Republic of
Kyoungwan Park
Affiliation:
kwpark@uos.ac.kr, University of Seoul, Department of Nano Science & Technology, Seoul, 130-743, Korea, Republic of
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Abstract

We developed a pulse-type gas-feeding technique in low pressure chemical vapor deposition system in order to grow Si nanoclusters with high density and uniform size. The maximum density and average size of the Si nanoclusters were 7 × 1011/cm2 and 7 nm, respectively. Floating gate memory devices containing the storage node of the Si nanoclusters were fabricated. The memory window was 4.5 V when the writing and erasing voltages were +14 V and −18 V, respectively. The writing and erasing times were measured to be 1 ms and 200 ms, respectively. The retention time of Si nanocluster nonvolatile memory was estimated about 10 years.

Keywords

memorystoragenucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I03-04
Copyright
Copyright © Materials Research Society 2007

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