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Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

Published online by Cambridge University Press:  15 February 2011

Nobuyoshi Natsuaki ,
Takao Miyazaki ,
Makoto Ohkura ,
Toru Nakamura ,
Masao Tamura  and
Takashi Tokuyama
Nobuyoshi Natsuaki
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Takao Miyazaki
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Makoto Ohkura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Toru Nakamura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Masao Tamura
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Takashi Tokuyama
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Bipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 375
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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