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SiGe/Si Heterojunction Internal Photoemission Long-Wavelength Infrared Detectors

Published online by Cambridge University Press:  25 February 2011

T. L. Lin ,
A. Ksendzov ,
S. M. Dejewski ,
E. W. Jones ,
R. W. Fathauer ,
T. N. Krabach ,
J. Maserjian  and
R. W. Terhune
T. L. Lin
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
A. Ksendzov
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
S. M. Dejewski
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
E. W. Jones
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
R. W. Fathauer
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
T. N. Krabach
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
J. Maserjian
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
R. W. Terhune
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
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Extract

There is a great need of long-wavelength (8-17μm) infrared (LWIR) focal plane arrays (FPAs) for a variety of space and defense applications. Si-based infrared detectors offers several important advantages, including good uniformity, low cost, and easy integration with Si readout circuitry either monolithically or by indium bump bonding to form large arrays. We report here a novel SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector fabricated by molecular beam epitaxy [1].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 523
Copyright
Copyright © Materials Research Society 1991

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References

1. Lin, T. L., Maserjian, J., Appl. Phys. Lett. 57, 1422 (1990)Google Scholar
2. People, R., Bean, J. C., Lang, D. V., Sergent, A. M., Stormer, H. L., Wecht, K. W., Lynch, R. T., and Baldwin, K., Appl. Phys. Lett. 45, 1231 (1984).Google Scholar
3. Grunthaner, P. J., Grunthaner, F. J., Fathauer, R. W., Lin, T. L., Schowengerdt, F. D., Hecht, M. H., Bell, D., Kaiser, W., and Mazur, J. H., Thin Solid Films 183, 197 (1989).CrossRefGoogle Scholar
4. Lin, T. L., Fathauer, R. W., and Grunthaner, P. J., Appl. Phys. Lett. 55, 795 (1989).Google Scholar
5. Tatsumi, T., Hirayama, H., and Aizaki, N., Appl. Phys. Lett. 50, 1234 (1987).Google Scholar