Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-18T20:35:00.507Z Has data issue: false hasContentIssue false
  • English
  • Français

SiC Power Devices

Published online by Cambridge University Press:  15 February 2011

T. P. Chow  and
M. Ghezzo
T. P. Chow
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180-3590, chow@unix.cie.rpi.edu
M. Ghezzo
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12301, ghezzo@crdgw2.crd.ge.com
Get access

Abstract

The present status of SiC high-voltage power switching devices is reviewed. The figures of merits that have been used for unipolar and bipolar devices to quantify the intrinsic performance improvement over silicon are presented. Analytical and numerical modeling and simulations to estimate the BV and device choice are described. The active area and termination design of trenched-gate MOS power transistors, together with an integrated process for their fabrication, is presented. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for SiC device commercialization are discussed. Finally, the impact of SiC power devices on motor drive systems is estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 9
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shenai, K., Scott, R. S., and Baliga., B. J., IEEE Trans. Electron Devices 36, 1811 (1989).Google Scholar
2. Baliga, B. J., IEEE Electron Device Lett. 10, 455 (1989).Google Scholar
3. Bhatnagar, M. and Baliga, B. J., IEEE Trans. Electron Devices,Google Scholar
4. Chow, T. P. and Tyagi, R., IEEE Trans. Electron Devices 41, 1481 (1994).Google Scholar
5. Bhalla, A. and Chow, T. P., Paper 6.13, Proc. 6th International Symp. Power Semiconductor Devices and ICs, pp.287–292, May 31-Jun 2 (1994).Google Scholar
6. Kyuregyan, A. S. and Yurkov, S. N., Sov. Phys. Semicond., 23, 1126 (1989).Google Scholar
7. Ramungul, N., Tyagi, R., Bhalla, A., Chow, T. P., Ghezzo, M., Kretchmer, J., and Hennessy, W., Int'l Conf. on SiC and Related Materials - ICSRCM-95, Tech. Dig., 322, 1995 (unpublished).Google Scholar
8. Fulop, W., Solid-State Electron. 10, 39 (1967).Google Scholar
9. Konstantinov, A. O., in Amorphous and Crystalline Silicon Carbide III, edited by Harris, G. L., Spencer, M. G., and Yang, C. Y.-W. (Srpinger-Verlag, Berlin Heidelberg, 1992), p. 213.Google Scholar
10. Palmour, J. W., Allen, S. T., and Waltz, D. G., Int'l Conf. on SiC and Related Materials - ICSRCM-95, Tech. Dig., 319, 1995 (unpublished).Google Scholar
11. Ramungul, N., Chow, T. P., Ghezzo, M., Kretchmer, J., and Hennessy, W., to be presented at the 54th Device Research Conference, 1996 (unpublished).Google Scholar
12. Wang, T. K., Chow, T. P., Brown, D. M., and Ghezzo, M., Proc. 4th International Symposium on Power Semiconductor Devices and ICs, pp.303–308, May 19–21, 1992.Google Scholar
13. Chang, H.-R., Black, R. D., Temple, V. A. K., Tantraporn, W., and Baliga, B. J., IEEE Trans.Electron Devices ED-34, 2329 (1987).Google Scholar
14. Matsumoto, S., Ohno, T., Ishii, H., and Yoshino, H., IEEE Trans. Electron Devices, 41, 814(1994).Google Scholar
15. Kordinar, O., Bergman, J. P., Henry, A., Janzen, E., Savage, S., Andre, J., Ramberg, L. P., Lindefelt, U., Hermansson, W., and Bergman, K., Appl. Phys. Lett., 11, 1561 (1995)Google Scholar
16. Neudeck, P. G., Larkin, D. J., Starr, J. E., Powell, J. A., Salupo, C. S., and Matus, L. G., IEEE Trans. Electron Devices 41, 826 (1994).Google Scholar
17. Su, J. N. and Steckl, A. J., Int'l Conf on SiC and Related Materials - ICSRCM-95, Tech. Dig., 597, 1995 (unpublished).Google Scholar
18. Itoh, A., Kimoto, T., Matsunami, H., Int'l Conf. on SiC and Related Materials - ICSRCM-95,Tech. Dig., 559, 1995 (unpublished).Google Scholar
19. Raghunathan, R., Alok, D., and Baliga, B. J., IEEE Electron Device Letters, 16, 226 (1995).Google Scholar
20. Palmour, J. W., Edmond, J. A., and Carter, C. H., presented at the 51st Device Research Conference, 1993 (unpublished).Google Scholar
21. Alok, D. and Baliga, B. J., Int'l Conf. on SiC and Related Materials - ICSRCM-95, Tech. Dig., 307, 1995 (unpublished).Google Scholar
22. Xie, K., Zhao, J. H., Flemish, J. R., Burke, T., Buchwald, W. R., Lorenzo, G., and Singh, H., IEEE Electron Device Letters, 17, 142 (1996).Google Scholar
23. Palmour, J. W., presented at theWorkshop on High-Temperature Electronics, FortMommouth, NJ, 1995 (unpublished).Google Scholar
24. Brown, D. M., Ghezzo, M., Kretchmer, J., Downey, E., Pimbley, J., and Palmour, J., IEEE Trans.Electron Devices, 41, 618 (1994).Google Scholar
25. Shenoy, J. N., Chindalore, G. L., Melloch, M. R., Cooper, J. A., Palmour, J. W., and Irvine, K. G., J. Electron. Mater. 24, 303 (1995).Google Scholar
26. Pensl, G., Int'l Conf. on SiC and Related Materials - ICSRCM-95, Tech. Dig., 585, 1995 (unpublished).Google Scholar
27. Krishnamurthy, V., Brown, D. M., Ghezzo, M., Kretchmer, J., Hennessy, W., Downey, E., and Michon, G., in Silicon Carbide and Related Compounds, edited by Spencer, M. G., Devaty, R. P., Edmond, J. A., Khan, M. Asif, Kaplan, R., and Rahman, M. (Institute of Physics Publishing, Bristol and Philadelphia, 1994), pp.483–486.Google Scholar
28. Edmond, J. A., Das, K., and Davis, R. F., J. Appl. Phys., 63, 922 (1988).Google Scholar
29. Ghezzo, M., Brown, D. M., Downey, E., Kretchmer, J., Hennessy, W., Polla, D. L., and Bakhru, H., IEEE Electron Device Lett., 13, 639 (1992).Google Scholar
30. Ghezzo, M., Brown, D. M., Downey, E., and Kretchmer, J., Appl. Phys. Lett., 63, 1206 (1993).Google Scholar
31. Ramungul, N., Khemka, V., Tyagi, R., Chow, T. P., Ghezzo, M., Neudeck, P. G., Kretchmer, J., Hennessy, W., and Brown, D. M., Int'l Conf on SiC and Related Materials - ICSRCM-95,Tech. Dig., 561, 1995 (unpublished).Google Scholar
32. Shenoy, P. M. and Baliga, B. J., IEEE Electron Device Lett., 16, 454 (1995).Google Scholar
33. Baliga, B. J., Proc. IEEE, 82, 1112 (1994).Google Scholar
34. Ramungul, N., Chow, T. P., Torrey, D. A., Ghezzo, M., King, R. D., Kretchmer, J., and Hennessy, W., First Int'l Conf. on All Electric Combat Vehicle (AECV), Conf Proc., 211, 1995 (unpublished).Google Scholar