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SiC Power Devices – An Overview

Published online by Cambridge University Press:  21 March 2011

Anant Agarwal ,
Mrinal Das ,
Sumithra Krishnaswami ,
John Palmour ,
James Richmond  and
Sei-Hyung Ryu
Anant Agarwal
Affiliation:
Cree Inc., 4600 Silicon Dr., Durham, NC 27703, U.S.A.
Mrinal Das
Affiliation:
Cree Inc., 4600 Silicon Dr., Durham, NC 27703, U.S.A.
Sumithra Krishnaswami
Affiliation:
Cree Inc., 4600 Silicon Dr., Durham, NC 27703, U.S.A.
John Palmour
Affiliation:
Cree Inc., 4600 Silicon Dr., Durham, NC 27703, U.S.A.
James Richmond
Affiliation:
Cree Inc., 4600 Silicon Dr., Durham, NC 27703, U.S.A.
Sei-Hyung Ryu
Affiliation:
Cree Inc., 4600 Silicon Dr., Durham, NC 27703, U.S.A.
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Abstract

An overview of SiC Power Devices is provided. Progress in 1200 V SiC Schottky diodes, 1200 V SiC BJTs, 10-20 kV SiC PiN diodes and 2 kV SiC Power MOSFETs will be described. SiC Schottky diodes have already been commercialized. The next step of inserting these diodes in Si IGBT modules is happening now. Emphasis is placed on the problems and issues at the SiC device/process interface which need to be urgently addressed such as the roughness created during the implant anneals, reliability of the gate oxide under positive and negative bias, low current gain of the BJTs, forward voltage instability in the pn junctions etc. Overcoming these issues in the near future will be critical to the successful commercialization of SiC devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J1.1
Copyright
Copyright © Materials Research Society 2004

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References

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