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Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

Published online by Cambridge University Press:  10 February 2011

S. Kato ,
T. Horikoshi ,
T. Ohkubo ,
T. Iida  and
Y. Takano
S. Kato
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda-shi, Chiba 278-8510Japan
T. Horikoshi
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda-shi, Chiba 278-8510Japan
T. Ohkubo
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda-shi, Chiba 278-8510Japan
T. Iida
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda-shi, Chiba 278-8510Japan
Y. Takano
Affiliation:
Department of Materials Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda-shi, Chiba 278-8510Japan
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Abstract

The bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 321
Copyright
Copyright © Materials Research Society 2000

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