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Si(001) Molecular Beam Epitaxy: Enhanced Diffusion or Bonding?

Published online by Cambridge University Press:  25 February 2011

S. Clarke ,
M.R. Wilby  and
D.D. Vvedensky
S. Clarke
Affiliation:
The Blackett Laboratory and Semiconductor Interdisciplinary Research Centre, Imperial College, Prince Consort Road, London, SW7 2BZ, United Kingdom
M.R. Wilby
Affiliation:
The Blackett Laboratory and Semiconductor Interdisciplinary Research Centre, Imperial College, Prince Consort Road, London, SW7 2BZ, United Kingdom
D.D. Vvedensky
Affiliation:
The Blackett Laboratory and Semiconductor Interdisciplinary Research Centre, Imperial College, Prince Consort Road, London, SW7 2BZ, United Kingdom
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Abstract

Through application of a lattice model of the Si(001) surface, implemented in a Monte Carlo growth simulation we investigate the structural evolution of the Si(001) surface during molecular beam epitaxy. Particular emphasis is placed upon identifying the role of both enhanced diffusion and directional bonding.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 247
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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