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Short-Wavelength Intersubband Light Emission from Optically Pumped GaN/AlN Quantum Wells

Published online by Cambridge University Press:  31 January 2011

Roberto Paiella ,
Kristina Driscoll ,
Yitao Liao ,
Anirban Bhattacharyya ,
Lin Zhou ,
David J. Smith  and
Theodore D. Moustakas
Roberto Paiella
Affiliation:
rpaiella@bu.edu
Kristina Driscoll
Affiliation:
kd8@bu.edu, Boston University, Boston, Massachusetts, United States
Yitao Liao
Affiliation:
yitao@bu.edu, Boston University, Boston, Massachusetts, United States
Anirban Bhattacharyya
Affiliation:
anirban1@gmail.com, Boston University, Boston, Massachusetts, United States
Lin Zhou
Affiliation:
lzhou5@asu.edu, Arizona State University, Tempe, Arizona, United States
David J. Smith
Affiliation:
david.smith@asu.edu, Arizona State University, Tempe, Arizona, United States
Theodore D. Moustakas
Affiliation:
tdm@bu.edu, Boston University, Boston, Massachusetts, United States
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Abstract

Due to their large conduction-band offsets, GaN/Al(Ga)N quantum wells are currently the subject of extensive research efforts aimed at extending the spectral range of intersubband optoelectronic devices towards shorter and shorter wavelengths. Here we report our recent measurement of optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Nanosecond-scale optical pulses are used to resonantly pump electrons from the ground states to the second excited subbands, followed by radiative relaxation into the first excited subbands. The intersubband origin of the measured photoluminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence.

Keywords

epitaxynitrideoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I10-08
Copyright
Copyright © Materials Research Society 2010

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