Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-26T16:50:48.477Z Has data issue: false hasContentIssue false
  • English
  • Français

Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy

Published online by Cambridge University Press:  01 February 2011

Sergey Nikishin ,
Boris Borisov ,
Vladimir Kuryatkov ,
Mark Holtz  and
Henryk Temkin
Sergey Nikishin
Affiliation:
sergey.a.nikishin@ttu.edu, Texas Tech University, department of ECE, Lubbock, TX, 79409, United States
Boris Borisov
Affiliation:
b.borisov@ttu.edu, Texas Tech University
Vladimir Kuryatkov
Affiliation:
vladimir.kuryatkov@ttu.edu, Texas Tech University
Mark Holtz
Affiliation:
mark.holtz@ttu.edu, Texas Tech University
Henryk Temkin
Affiliation:
henryk.temkin@ttu.edu, Texas Tech University
Get access

Abstract

We report the results of two studies of the growth and physical properties of AlGaN-based short-period superlattices (SPSLs), each aimed at improving light emission. In the first experiment, we grow structures on bulk AlN substrates. We observe ∼ 3 times higher luminescence efficiency than identically grown structures on sapphire. In the second experiment, we grow structures on sapphire while controlling the growth mode. We observe a significant improvement in the room temperature cathodoluminescence efficiency (at least by factor of 10) of AlGaN quantum wells when the 3D growth mode is induced by reduced flux of ammonia over identically prepared structures grown in the 2D mode.

Keywords

molecular beam epitaxy (MBE)RHEEDluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF01-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kipshidze, G., Kuryatkov, V., Borisov, B., Nikishin, S., Holtz, M., Chu, S. N. G., and Temkin, H.: Phys. Stattus Solidi A 192 286 (2002).Google Scholar
2. Adivarahan, V., Zhang, J., Chitnis, A., Shuai, W., Sun, J., Pachipulusu, R., Shatalov, M., and Khan, M. A., Jpn. J. Appl. Phys. 41 L435 (2002).CrossRefGoogle Scholar
3. Yasan, A., McClintock, R., Mayers, K., Darvish, S. R., Kung, P., and Razeghi, M., Appl. Phys. Lett. 81 801 (2002).CrossRefGoogle Scholar
4. Kipshidze, G., Kuryatkov, V., Zhu, K., Borisov, B., Holtz, M., Nikishin, S., and Temkin, H.: J. Appl. Phys. 93 1363 (2003).CrossRefGoogle Scholar
5. Hanlon, A., Pattison, P.M., Kaeding, J. F., Sharma, R., Fini, P., and Nakamura, S.: Jpn. J. Appl. Phys., 42 L628 (2003).CrossRefGoogle Scholar
6. Nikishin, S. A., Kuryatkov, V., Chandolu, A., Borisov, B., Kipshidze, G., Temkin, H., Ahmad, I., and Holtz, M., Jpn. J. Appl. Phys. 42 L1362 (2003).CrossRefGoogle Scholar
7. Fischer, A. J., Allerman, A. A., Crawford, M. H., Bogart, K. H. A., Lee, S. R., Kaplar, R. J., Chow, W. W., Kurtz, S. R., Fullmer, K. W., and Figiel, J. J., Appl. Phys. Lett. 84 3394 (2004).CrossRefGoogle Scholar
8. Adivarahan, V., Wu, S., Zhang, J. P., Chitnis, A., Shatalov, M., Mandavilli, V., Gaska, R., and Khan, M. A., Appl. Phys. Lett., 84, 4762 (2004).CrossRefGoogle Scholar
9. Nikishin, S., Holtz, M., and Temkin, H., Jpn. J. Appl. Phys., 44, 7221 (2005).CrossRefGoogle Scholar
10. Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer, Berlin, 1997).CrossRefGoogle Scholar
11. Nikishin, S. A., Borisov, B. A., Chandolu, A., Kuryatkov, V. V., Temkin, H., Holtz, M., Mokhov, E. N., Makarov, Yu., and Helava, H., Appl. Phys. Lett., 85, 4355 (2004).CrossRefGoogle Scholar
12. Metzger, T., Hoppler, R., Born, E., Ambacher, O., Stutzmann, M., Stommer, R., Schuster, M., Gobel, H., Christiansen, S., Albrecht, M., and Strunk, H. P., Philos. Mag. A 77, 1013 (1998).CrossRefGoogle Scholar
13. Yoshida, S., Misawa, S., and Gonda, S., Appl. Phys. Lett., 42, 427 (1983).CrossRefGoogle Scholar
14. Nikishin, S. A., Antipov, V. G., Francoeur, S., Faleev, N. N., Seryogin, G. A., Elyukhin, V. A., Temkin, H., Prokofyeva, T. I., Holtz, M., Konkar, A., and Zollner, S., Appl. Phys. Lett., 75, 484 (1999).CrossRefGoogle Scholar
15. Kipshidze, G., Kuryatkov, V., Choi, K., Gherasoiu, Iu., Borisov, B., Nikishin, S., Holtz, M., Tsvetkov, D., Dmitriev, V., and Temkin, H., Phys. Stat. Sol. (a), 188, 881 (2001).3.0.CO;2-#>CrossRefGoogle Scholar
16. Karpov, S. Yu., and Makarov, Yu. N., Appl. Phys. Lett., 81, 4721 (2002).CrossRefGoogle Scholar
17. See for example, Panish, M. B. and Temkin, H., Gas Source Molecular Beam Epitaxy (Springer-Verlag, Berlin, 1993).CrossRefGoogle Scholar
18. Borisov, B., Kuryatkov, V., Kudryavtsev, Yu., Asomoza, R., Nikishin, S., Holtz, M., and Temkin, H. H., Appl. Phys. Lett., 87, 132106 (2005).CrossRefGoogle Scholar