Hostname: page-component-77c89778f8-gvh9x Total loading time: 0 Render date: 2024-07-18T21:07:38.358Z Has data issue: false hasContentIssue false
  • English
  • Français

Semitransparent Silicide Electrode Formed on the Surface of a-Si:H

Published online by Cambridge University Press:  21 February 2011

T. Tsukada ,
K. Seki ,
H. Yamamoto  and
A. Sasano
T. Tsukada
Affiliation:
Central Research Laboratory, Hitachi, Ltd.1–280 Higashi-Koigakubo, Kokubunji, Tokyo 185, JAPAN
K. Seki
Affiliation:
Central Research Laboratory, Hitachi, Ltd.1–280 Higashi-Koigakubo, Kokubunji, Tokyo 185, JAPAN
H. Yamamoto
Affiliation:
Central Research Laboratory, Hitachi, Ltd.1–280 Higashi-Koigakubo, Kokubunji, Tokyo 185, JAPAN
A. Sasano
Affiliation:
Central Research Laboratory, Hitachi, Ltd.1–280 Higashi-Koigakubo, Kokubunji, Tokyo 185, JAPAN
Get access

Abstract

Thin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon(a-Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal on top of amorphous silicon layer and annealing and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be 5 nm. Accordingly, it can be used as a transparent electrode in a-Si:H photodiodes. Photodiodes using this semitransparent electrode have as good optical and electrical properties as conventional a-Si:H photodiodes using ITO(indium tin oxide). Schottky barrier characteristics are also de-scribed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 301
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Carlson, D. E. and Wronski, C. R., Appl. Phys. Letters 28, 671–673 (1976).CrossRefGoogle Scholar
2. Shimizu, I., Komatsu, T., Saito, K., and Inoue, E., J. Non-Crystalline Solids 35 36, 773–778 (1980).CrossRefGoogle Scholar
3. Yamamoto, H., Baji, T., Matsumaru, H., Tanaka, Y., Seki, K., Tanaka, T., Sasano, A., and Tsukada, T., Extended Abstracts 15th Conf. Solid State uevices and Materials 205–208 (1983).Google Scholar
4. Okumura, F., Kaneko, S., and Uchida, H., Extended Abstracts 15th Conf. Solid State Devices and Materials 201–204 (1983).Google Scholar
5. Tsukada, T. et al., Digest IEDM 81 479–482 (1981).Google Scholar
6. Snell, A. J., Mackenzie, K. D., Spear, W. E., LeComber, P. G., and Hughes, A. J., ESSDERC 80 Europhysics Conf. Abstracts 99–100 (1980)Google Scholar
7. Kitagawa, M., Mori, K., Ishihara, S., Ohno, M., Hirao, T., Yoshioka, Y., and Kohiki, S., J. Appl. Phys. 54, 3269–3271 (1983).CrossRefGoogle Scholar
8. Ishihara, S., Hirao, T., Mori, K., Kitagawa, M., Ohno, M., and Kohiki, S., J. Appl. Phys. 53, 3909–3911 (1982).CrossRefGoogle Scholar
9. Seki, K., Yamamoto, H., Sasano, A., and Tsukada, T., J. Non-Crystalline Solids 59 60, 1179–1182 (1983).CrossRefGoogle Scholar
10. Hara, T., Enomoto, S., Yamamoto, H., and Tsukada, T., J. Non-Crystalline Solids 59 60, 521–524 (1983).CrossRefGoogle Scholar
11. Tsai, C. C., Thompson, M. J., and Nemanichi, R. J., Journal de Physique C4,1077–1080 (1981).Google Scholar