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Self-oriented Growth of GaN Films on Molten Gallium

Published online by Cambridge University Press:  01 February 2011

Hongwei Li ,
Hari Chandrasekaran ,
Mahendra K Sunkara ,
Ramon Collazo ,
Zlatko Sitar ,
Michael Stukowski  and
Krishna Rajan
Hongwei Li
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292
Hari Chandrasekaran
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292
Mahendra K Sunkara
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292
Ramon Collazo
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, 1001 Capability Drive, Research 1, Box 7919, Raleigh, NC 27695–7919
Zlatko Sitar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, 1001 Capability Drive, Research 1, Box 7919, Raleigh, NC 27695–7919
Michael Stukowski
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, 110 Materials Research Center, 110 8th Street, Troy, NY 12180
Krishna Rajan
Affiliation:
Department of Materials Science & Engineering, Rensselaer Polytechnic Institute, 110 Materials Research Center, 110 8th Street, Troy, NY 12180
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Abstract

This paper presents a concept of growing near single crystal quality GaN films over large areas through self-oriented growth of GaN platelets on molten gallium. The experiments were performed by nitridation of Ga films on amorphous quartz substrates using nitrogen plasma at low pressures of few mTorr. XRD texture analysis of the free standing GaN flakes with areas over 25 mm2 exhibited an overall c-axis tilt of 2.2°, while showing primary reflections from (0002) and (0004) planes. Further more, the cross-sectional TEM micrographs showed that the resulting GaN films are free from dislocation crops inside the grains but showed diffraction contrast due to small misorientation between the grains. The twist and tilt angles between adjacent columnar grains were determined using convergent beam electron diffraction technique to be less than 8° and 1°, respectively. HRTEM micrographs of the grain boundaries showed sharp interfaces with both twisted and perfect attachments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E11.34
Copyright
Copyright © Materials Research Society 2005

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