Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-19T14:26:12.235Z Has data issue: false hasContentIssue false
  • English
  • Français

Self-interstitials have never been observed in crystalline Si. How about amorphous Si?

Published online by Cambridge University Press:  17 March 2011

Sjoerd Roorda
Sjoerd Roorda*
Affiliation:
Département de physique et Groupe de recherche en physique et technologie des couches mines, Université de Montréal CP 6128 succursale Centre-ville Montréal, H3C 3J7, CANADA
Get access

Abstract

In the early days of point defect studies in electron irradiated crystalline silicon, it was surmised that the Si self-interstitial is highly mobile even at 4 K and escapes direct detection. The existence of self-interstitials has of course been confirmed through the diffusion behaviour of a range of impurities and the direct observation of larger interstitial-type clusters. Against this background, the direct observation of self-interstitials in amorphous Si would seem next to impossible. Yet just such an observation may have been made recently, through a comparison of the high-resolution radial distribution function of pure amorphous Si before and after thermal anneal and that of crystalline Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A16.1
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Roorda, S., Sinke, W. C., Poate, J. M., Jacobson, D. C., Dierker, S., Denis, B. S, Eaglesham, D. J., Spaepen, F., and Fuoss, P., Phys. Rev. B 44, 3702 (1991).Google Scholar
[2] Coffa, S., Poate, J.M., Jacobson, D.C., and Polman, A., Appl. Phys. Lett. 58, 2916 (1991).Google Scholar
[3] Roorda, S., Hakvoort, R.A., Veen, A. van, Stolk, P.A., and Saris, F.W., J. Appl. Phys. 72, 5145 (1992).Google Scholar
[4] Laaziri, K., Kycia, S., Roorda, S., Chicoine, M., Robertson, J.L., Wang, J., and Moss, S.C., Phys. Rev. Lett. 82, 3460 (1999).Google Scholar
[5] Laaziri, K., Kycia, S., Roorda, S., Chicoine, M., Robertson, J.L., Wang, J., and Moss, S.C., Phys. Rev. B 60, 13520 (1999).Google Scholar
[6] Roorda, S., Laaziri, K., and Gujrathi, S.C., Nucl. Instr. and Meth. B 148, 360 (1999).Google Scholar
[7] Custer, J. S., Thomson, M. O., Jacobson, D. C., Poate, J. M., Roorda, S., Sinke, W. C. and Spaepen, F., Appl. Phys. Lett. 64, 437 (1994).Google Scholar
[8] Williamson, D. L., Roorda, S., Chicoine, M., Tabti, R., Stock, P. A., Acco, S. and Saris, F. W., Appl. Phys. Lett. 67, 226 (1995).Google Scholar
[9] Volkert, C. A., J. Appl. Phys. 74, 7107 (1993).Google Scholar