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Self-Formation of Au Microwires on Au-Covered Si Electrode Surface by Electrochemical Etching in Dilute Hydrofluoric Acid Solution

Published online by Cambridge University Press:  17 March 2011

Yasuo Kimura ,
Jun Nemoto ,
Atsushi Kusakabe ,
Yusuke Kondo  and
Michio Niwano
Yasuo Kimura
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Jun Nemoto
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Atsushi Kusakabe
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Yusuke Kondo
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Michio Niwano
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Abstract

We have investigated the method of fabricating microstructures on a Si surface that is covered with a patterned gold (Au) mask, by electrochemical etching (anodization) in dilute hydrofluoric acid (HF) solution. We found that at electrode potentials below approximately 0.5 V, the Si surface is preferentially etched on the fringe of the Au mask, where a number of pores are formed. At higher electrode potentials, Au microwires with about 1 µm in width form along the fringe of the Au mask overlayer. We suggest that electromigration of Au towards the fringe of the Au mask induces self-assembling of Au atoms to form microwires. The observed self-formation of metal microwires would be beneficial to the fabrication of metal micro- or nano-structures on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.22.1
Copyright
Copyright © Materials Research Society 2001

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