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Self-Consistent Kinetic Lattice Monte Carlo

Published online by Cambridge University Press:  10 February 2011

Andrew Horsfield
Affiliation:
Fujitsu European Centre for Information Technology, 2 Longwalk Road, Stockley Park, Uxbridge, UK
Scott Dunham
Affiliation:
Boston University, Department of Electrical and Computer Engineering, 8 St. Mary's Street, Boston, MA 02215
Hideaki Fujitani
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

We present a brief description of a formalism for modeling point defect diffusion in crystalline systems using a Monte Carlo technique. The main approximations required to construct a practical scheme are briefly discussed, with special emphasis on the proper treatment of charged dopants and defects. This is followed by tight binding calculations of the diffusion barrier heights for charged vacancies. Finally, an application of the kinetic lattice Monte Carlo method to vacancy diffusion is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Pesola, M., Boehm, J. von, Pöykkö, S. and Nieminen, R. M., Phys. Rev. B 58, 1106 (1998).Google Scholar
2. Puska, M. J., Pöykkö, S., Pesola, M. and Nieminen, R. M., Phys. Rev. B 58, 1318 (1998).Google Scholar
3. Bowler, D. R., Fearn, M., Goringe, C., Horsfield, A. P. and Pettifor, D. G., J. Phys.: Condens. Matter 10, 3719 (1998).Google Scholar
4. Elstner, M., Porezag, D., Jungnickel, G., Eisner, J. Haugk, M., Frauenheim, Th., Suhai, S. and Seifert, G., Phys. Rev. B 58, 7260 (1998).Google Scholar
5. Makov, G. and Payne, M., Phys. Rev. B 51, 4014 (1995).Google Scholar
6. Watkins, G. D., in Deep Centers in Semiconductors, edited by Pantelides, S. T. (Gordon and Breach, New York, 1986).Google Scholar
7. Mercer, J. L., Nelson, J. S., Wright, A. F. and Stechel, E. B., Modelling Simul. Mater. Sci. Eng. 6, 1 (1998).Google Scholar
8. Watkins, G. D., in Lattice Defects in Semiconductors 1974, edited by Huntley, F. A. (Institute of Physics, London, 1975).Google Scholar
9. Watkins, G. D., Troxell, J. R. and Chatterjee, A. P., in Defects and Radiation Effects in Semiconductors 1978, edited by Albany, J. H. (Institute of Physics, London, 1979).Google Scholar
10. Newton, J. L., Chatterjee, A. P., Harris, R. D. and Watkins, G. D., Physica 116B, 219 (1983).Google Scholar
11. Fahey, P. M., Griffin, P. B. and Plummer, J. D., Rev. Mod. Phys. 61, 289 (1989).Google Scholar