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Self Organized InAs Quantum Dots on Patterned GaAs Substrates

Published online by Cambridge University Press:  01 February 2011

M. Schramboeck ,
W. Schrenk ,
A. M. Andrews ,
T. Roch ,
G. Fasching ,
W. Brezna ,
A. Lugstein  and
G. Strasser
M. Schramboeck
Affiliation:
Institut fuer Festkoerperelektronik Technische Universität Wien Floragasse 7 1040 Wien, Austria
W. Schrenk
Affiliation:
Institut fuer Festkoerperelektronik Technische Universität Wien Floragasse 7 1040 Wien, Austria
A. M. Andrews
Affiliation:
Institut fuer Festkoerperelektronik Technische Universität Wien Floragasse 7 1040 Wien, Austria
T. Roch
Affiliation:
Institut fuer Festkoerperelektronik Technische Universität Wien Floragasse 7 1040 Wien, Austria
G. Fasching
Affiliation:
Institut fuer Festkoerperelektronik Technische Universität Wien Floragasse 7 1040 Wien, Austria
W. Brezna
Affiliation:
Institut fuer Festkoerperelektronik Technische Universität Wien Floragasse 7 1040 Wien, Austria
A. Lugstein
Affiliation:
Institut fuer Festkoerperelektronik Technische Universität Wien Floragasse 7 1040 Wien, Austria
G. Strasser
Affiliation:
Institut fuer Festkoerperelektronik Technische Universität Wien Floragasse 7 1040 Wien, Austria
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Abstract

We investigate the growth of InAs quantum dots on patterned GaAs substrates. The GaAs substrate has been structured using holographic lithography. Quantum dot formation along the patterns has been observed as well as an increase in homogeneity of the quantum dots. Furthermore, the use of ion beams focused to nanometer diameters for substrate patterning has been studied and showed promising results. For the investigation of vertically aligned InAs quantum dots, cross-sectional atomic force microscopy has been successfully employed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J19.4
Copyright
Copyright © Materials Research Society 2005

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References

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