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Self Assembled Monolayer Methods in the Fabrication of High-Tc Superconductor SNS Junction Nano-Devices

Published online by Cambridge University Press:  01 February 2011

Sungwook Kim
Affiliation:
Department of Chemistry and Biochemistry, Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712-1167
In Soon Chang
Affiliation:
Department of Chemistry and Biochemistry, Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712-1167
Fannyben Patel
Affiliation:
Department of Chemistry and Biochemistry, Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712-1167
John T. McDevitt
Affiliation:
Department of Chemistry and Biochemistry, Center for Nano- and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712-1167
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Abstract

Although the superconductor/normal metal (SN) interface is one of the most important controlling factors in determining the performance of superconductor/normal metal/superconductor (SNS) junctions, controlling the SN interface still remains difficult. The in situ deposit techniques have been widely used to cope with this problem, but they limit the types of SNS junctions that can be explored. Soft Chemistry Etching methods were developed to fabricate the YBCO/Au/YBCO and TX-YBCO/Au/TX-YBCO SNS junction nano-devices with ex situ deposit. The planar SNS junctions controlled by such methods exhibited good transport properties above 80 K with less than 10-8ω-cm2 contact resistivity. The current state of the suitable fabrication methods of SNS nano-devices will be described with experiment results.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1 Pekola, J, Ruggiero, B and Silverstrini, P (ed) 2002 Int. Workshop on Supercoducting Nano-Electronics Devices (New York: Kluwer-Academic)Google Scholar
2 Zhou, Ji Ping and McDevitt, John T., Appl. Phys. Lett. 72, 848 (1998)Google Scholar
3 Delin, K. A. and Kleinsasser, A. W., Supercon. Sci. Technol. 9, 227 (1996)Google Scholar
4 McDevitt, John T., Mirkin, Chad A., Lo, Rung-Kuang, Chen, Kaimin, Zhou, Ji-Ping, Xu, Feng, Haupt, Steven G., Zhao, Jianai, and Jurbergs, David C., Chem. Mater. 8, 811 (1996)Google Scholar
5 Lo, Rung-Kung, Richie, Jason E., Zhou, Ji Ping, Zhao, Jianai, Xu, Feng, Mirkin, Chad A., and McDevitt, John T., J. Am. Chem. Soc. 118, 11295 (1996)Google Scholar
6 McDevitt, John T., Johns, Chris E, Hampt, Steven G., Zhao, Jianai, Lo, Rung-Kuang, Synthetic Metal 85, 1319 (1997)Google Scholar
7 Xu, Feng, chen, Kaimin, Piner, Richard D., Mirkin, Chad A., Richie, Jason, and McDevitt, John T., Langmuir 14, 6505 (1998)Google Scholar
8 Richie, Jason E., Murray, William R., Kershan, Katherine, Diaz, Veronica, Tran, Long, and McDevitt, John T., J. Am. Chem. Soc. 121, 7447 (1999)Google Scholar
9 Zhou, Ji-Ping, Lo, Rung-Kuang, Savoy, Steven M, Arendt, Mark, Armstrong, Jeff, Yong, DuYu, Talvacchio, John, and McDevitt, John T., Physica C 273, 223 (1997)Google Scholar
10 Kita, Ryusuke and Osumi, Fumihiro, Physica C 357-360, 792 (2001)Google Scholar
11 Lo, Rung-Kuang, Ritchie, Jason E., Zhou, Ji-Ping, Zhao, Jianai, and McDevitt, John T., J. Am. Chem. Soc. 118, 11295 (1996)Google Scholar
12 Chen, Kaimin, Mirkin, Chad A., Lo, Rung-Kung, Zhao, Jianai, and McDevitt, John T., J. Am. Chem. Soc. 117, 6374 (1995)Google Scholar
13 Zhu, Jin, Xu, Feng, Schofer, Susan J., and Mirkin, Chad A., J. Am. Chem. Soc. 119, 235 (1997)Google Scholar
14 Ghyselen, B., Cabanel, R., Tyc, S., Crete, D.G., Barber, Z. H, Evetts, J.E., Assayag, G. Ben, Gierak, J., and Schuhl, A., Physica C 198, 215 (1992)Google Scholar
15 Forrester, M. G., Talvacchio, J., Gavaler, J. R., Rooks, M., and Lindquist, J., IEEE T rans. Magn. 27, 3098 (1991)Google Scholar