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Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

Published online by Cambridge University Press:  01 February 2011

Ian D. Sharp ,
Hartmut A. Bracht ,
Hughes H. Silvestri ,
Samuel P. Nicols ,
Jeffrey W. Beeman ,
John L. Hansen ,
Arne Nylandsted Larsen  and
Eugene E. Haller
Ian D. Sharp
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Hartmut A. Bracht
Affiliation:
Institut für Materialphysik, Universität Münster, D 48149 Münster, Germany
Hughes H. Silvestri
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Samuel P. Nicols
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Jeffrey W. Beeman
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
John L. Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK 8000 Aarhus, Denmark
Arne Nylandsted Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, DK 8000 Aarhus, Denmark
Eugene E. Haller
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. 30Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850°C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F13.11
Copyright
Copyright © Materials Research Society 2002

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