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Selective Voltage-Controlled Hole Spin in Non-Magnetic Resonant Tunneling Diodes

Published online by Cambridge University Press:  15 March 2011

A. C. R. Bittencourt ,
G. E. Marques ,
Y. Galvão Gobato ,
A. Vercik ,
I. Camps  and
M. J. S. P Brasil
A. C. R. Bittencourt
Affiliation:
Departamento de Física, Universidade Federal do Amazonas, 67.077-000, Manaus, Amazonas, Brazil
G. E. Marques
Affiliation:
Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil
Y. Galvão Gobato
Affiliation:
Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil, and Universidade Federal de Santa Catarina, Florianópolis, SC, Brasil
A. Vercik
Affiliation:
Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil, and Faculdade de Zootecnia e Engenharia de Alimentos, Departemento de CIâncias Básicas, Pirassununga, 13635-900, SP, Brasil
I. Camps
Affiliation:
Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brasil
M. J. S. P Brasil
Affiliation:
Grupo de Propriedades Ópticas, Instituto de Física Gleb Wataghin, Universidade de Campinas, 13083-970, Campinas, SP, Brasil
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Extract

We report theoretical and experimental observation of photoexcitated hole spin selection in GaAs/GaAlAs n-i-n in resonant tunneling diodes. When subjected to magnetic and electric parallel fields, the spin splitted hole levels leads to several peak structure in the transmissivity. These experimental results are interpreted as an evidence of tunneling transport through spin polarized hole levels of non-magnetic diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 825: Symposium G – Semiconductor Spintronics , 2004 , G5.10
Copyright
Copyright © Materials Research Society 2004

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References

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