Hostname: page-component-5c6d5d7d68-7tdvq Total loading time: 0 Render date: 2024-08-17T21:05:31.696Z Has data issue: false hasContentIssue false
  • English
  • Français

The Selective Synthesis of Molybdenum Silicides from Modulated Elemental Reactants

Published online by Cambridge University Press:  10 February 2011

Christopher D. Johnson  and
David C. Johnson
Christopher D. Johnson
Affiliation:
Materials Science Institute and Department of Chemistry, University of Oregon, Eugene, Oregon 97403.
David C. Johnson
Affiliation:
Materials Science Institute and Department of Chemistry, University of Oregon, Eugene, Oregon 97403.
Get access

Abstract

Elementally modulated reactants with repeat layer thicknesses of less than 30Å were found to crystallize various molybdenum silicides depending on their composition. Reactants with compositions near 1:2 Mo:Si were found to nucleate h-MoSi2, at 400°C with an activation energy of 1.9eV, even though h-MoSi2 is metastable with respect to t-MoSi2 below 1900°C. Reactants with compositions near 5:3 Mo:Si were found to nucleate Mo3Si3 at 650°C with an activation energy of 3.0eV. Reactants with compositions near 3:1 Mo:Si were found to nucleate Mo3Si at 720°C with an activation energy of 2.2eV. The ability to control the crystalline product via the initial composition is distinctly different from the behavior reported for multilayers with larger repeat spacings, which were observed to form h-MoSi2 regardless of overall composition. The measured nucleation energy as a function of composition suggests that the phase selectivity is nucleation controlled. The selectivity depends on the elimination of large composition gradients at the reacting interfaces before nucleation of the crystalline product.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 569
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. d'Heurle, F.M. and Gas, P., J. Mat. Res. 1 (1),205 (1986)Google Scholar
2. Ottaviani, G., Thin Solid Films 140, 3 (1986)Google Scholar
3. Guivarc'h, A., Auvray, P., Berthou, L., Cun, M. Le, Boulet, J. P., Henoc, P., Pelous, G., Martinez, A., J. Appl. Phys 49 (1), 233 (1978)Google Scholar
4. Baglin, J., Dempsey, J., Hammer, W., d'H-eurle, F., Petersson, S., Serrano, C., J.ofElec. Mat. 8 (5) 641 (1979)Google Scholar
5. Holloway, K., Do, K. B., Sinclair, R., J. Appl. Phys. 65 (2), 474 (1989)Google Scholar
6. Chi, E., Shim, J., Kwak, J., Baik, H., J. Mat. Sci. 31 (13) 3567 (1996)Google Scholar
7 Nakajima, H., Fujimori, H., Koiwa, M., J. Appl. Phs. 63 (4), 1046 (1988)Google Scholar
8. Jiang, Z., Jiang, X., Liu, W., Wu, Z., J.Appl. Phys. 65 (1), 196 (1989)Google Scholar
9. Steams, D. G., Steams, M. B., Cheng, Y., Stith, J. H., Ceglio, N. M., J. Appl. Phys., 67 (5) 2415 (1990)Google Scholar
10. Liang, J. M. and Chen, L. J., J. Appl. Phys. 79 (8), 4072 (1996)Google Scholar
11. Kissinger, H. E., Anal. Chem. 29, 1072 (1957)Google Scholar