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Selective Laser Annealing For Device Processing

Published online by Cambridge University Press:  15 February 2011

I.D. Calder ,
A.A. Naem  and
H.H. Naguib
I.D. Calder
Affiliation:
Bell-Northern Research, Ottawa, Canada K1Y 4H7
A.A. Naem
Affiliation:
Bell-Northern Research, Ottawa, Canada K1Y 4H7
H.H. Naguib
Affiliation:
Bell-Northern Research, Ottawa, Canada K1Y 4H7
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Abstract

Selective laser crystallization of undoped polysilicon films has been achieved through the use of a patterned Si3N4 anti-reflection (AR) coating. The recrystallized poly-Si beneath the AR cap exhibits an etch rate 50–90% lower than the surrounding uncapped material, allowing anisotropic etching of poly-Si for the fabrication of MOSFET gates. Undercut is reduced by at least a factor of two from unannealed material. Annealed edge profiles are uniform within ±0.03μm for plasma etching (±0.05 for wet etching) compared to ±0.1μm (± 0.25μm for wet etching) for unannealed regions. The sheet resistivity of 0.5μm films doped by phosphorus diffusion was reduced from an initial value of 82±5 Ω/□ to 40±8 Ω/□ when the dopant was diffused into recrystallized poly-Si and to a final value of 10.2 ± 0.2 Ω/□; after a further laser activation step. Potential applications in VLSIC processing are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 443
Copyright
Copyright © Materials Research Society 1983

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References

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