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Selective Growth of Si Crystals over Amorphous Substrates Seeded by Solid-State Agglomeration of Patterned Si

Published online by Cambridge University Press:  21 February 2011

K. Yamagata  and
T. Yonehara
K. Yamagata
Affiliation:
R/D Headquarters, Canon Inc., 6770 Tamura Hiratsuka-city, Kanagawa, 254, Japan
T. Yonehara
Affiliation:
R/D Headquarters, Canon Inc., 6770 Tamura Hiratsuka-city, Kanagawa, 254, Japan
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Abstract

Selective growth of Si crystals over amorphous substrates, seeded by agglomerated single domained Si crystals is demonstrated. In this method, Si crystal seeds are periodically placed and selectively overgrown until impingement upon adjacent crystals, resulting in a matrix of large Si islands with controlled grain boundary locations. Si seeds are formed over amorphous SiO2 by the solid-state agglomeration phenomenon, and grown selectively up to 100 μm by CVD selective epitaxial growth technique. The grown crystals are classified in three crystalline forms of single crystals, primary twins, and multiple twins. However, most are single crystals with a specific orientation of (110) normal to the substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 365
Copyright
Copyright © Materials Research Society 1990

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References

1) Yonehara, T., Nishigaki, Y., Mizutani, H., Kondoh, S., Yamagata, K. and Ichikawa, T., ExAbstr, t.. the 19th Conf. SSDM, Tokyo, p.191, (1987)Google Scholar
2) Yonehara, T., Nishigaki, Y., Mizutani, H., Kondoh, S., Yamagata, K. and Ichikawa, T., MRS Symp. Proc., Vol.106, p.21,(1988)Google Scholar
3) Yonehara, T., Nishigaki, Y., Mizutani, H., Kondoh, S., Yamagata, K., Noma, T. and Ichikawa, T., Appl. Phys. Lett., Vol.52, p.1231,(1988)Google Scholar
4) Ma, J.S., Kawarada, H., Yonehara, T., Suzuki, J., Wei, J., Yokota, Y. and Hiraki, A., Appl. Phys. Lett., Vol.55, p.1071, (1989)Google Scholar
5) Hirabayashi, K., Taniguchi, Y., Takamatsu, O., Ikeda, T., Ikoma, K., and Iwasaki-Kurihara, N., Appl. Phys. Lett., Vol.53, p.1815, (1988)Google Scholar
6) Yonehara, T., Thompson, C.V. and Smith, Henry I., MRS Symp. Proc. Vol.25, p.517, (1984)Google Scholar
7) Fan, John C.C., Tsaur, B.-Y. and Geis, M.W., J. of Crystal Growth, Vol.63, p.453,(1983)Google Scholar
8) Shinha, A.K., Haszko, S.E. and Sheng, T.T., J. of Electrochemical Soc., Vol.122, No.12, p.1714, (1975)Google Scholar
9) Wada, Y. and Nishimatu, S., J. of Electrochemical Soc., Vol.125, No.9, p.1499, (1978)Google Scholar
10) Yonehara, T., Nishigaki, Y. and Mizutani, H., OYO BUTURI (A monthly publication of the Japan Soc. of Appl. Phys.), Vol.57, No.9, p. 105(1988)Google Scholar
11) Kamins, T.I. and Cass, T.R., Thin Solid Films, Vol.16, p.147, (1973)Google Scholar