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Selective Growth of Diamond Films On Mirror-Polished Silicon Substrates

Published online by Cambridge University Press:  22 February 2011

M.Y. Mao ,
S.S. Tan ,
X.K. Zhang  and
W.Y. Wang
M.Y. Mao
Affiliation:
Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
S.S. Tan
Affiliation:
Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
X.K. Zhang
Affiliation:
Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
W.Y. Wang
Affiliation:
Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, China
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Abstract

Polycrystalline diamond thin films have been selectively grown on mirror-polished silicon substrates using bias-enhanced microwave plasma chemical vapour deposition (MPCVD) to increase diamond nucleation density. A slight etching of Si02 mask was employed after the nucleation treatment to remove the diamond nuclei on the mask. Perfect diamond patterns with smooth surface (particle size <0.5µm) and sharp boundaries were obtained. The diamond film gears with 400µm in diameter and 5µm in thickness were first fabricated by this technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 147
Copyright
Copyright © Materials Research Society 1994

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References

references

1. Hirabayashi, K. and Tanguchi, Y., Appl. Phys. Lett. 53, 1815 (1989).Google Scholar
2. Davidson, J.L., Ellis, C. and Ramesham, R., J. Electron. Mater. 18, 711 (1989).Google Scholar
3. Ma, Jingsheng, Kawarada, Hiroshi, Yonehara, Takao, Suzuki, Jun-Ichi, Wei, Jin, Yokota, Yoshihiro and Hiraki, Akio, Appl. Phys. Lett. 55, 1071 (1989).CrossRefGoogle Scholar
4. Ramesham, R. and Roppel, T., J. Mater. Res. 7, 1144 (1991).CrossRefGoogle Scholar
5. Everson, M.P. and Tamor, M.A., J. Vac. Sci. Technol. B, 9, 1570 (1991).Google Scholar
6. Avigal, Y., Diamond Relat. Mater. 1, 216 (1992).CrossRefGoogle Scholar
7. Bienk, Ewa J. and Eskildsen, Svend S., Diamond Relat. Mater. 2, 432 (1993).Google Scholar
8. Yugo, S., Kanai, T., Kimura, T. and Muto, T., Appl. Phys. Lett. 58, 1036 (1991).Google Scholar
9. Jiang, X., Six, R. and Klages, C.P., Diamond Relat. Mater. 2, 407 (1991).CrossRefGoogle Scholar
10. Stoner, B.R., Ma, G.H., Wolter, S.D. and Glass, J.T., Phys. Rev. B, 45, 11067 (1992).CrossRefGoogle Scholar
11. Pickrell, D.J., Zhu, W., Badzian, A.R., Newnham, R.E. and Messier, R., J. Mater. Res. 6, 1264 (1991).Google Scholar