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Selective Epitaxial Silicon and Selective Titanium Silicide in an Industrial Integrated Cluster Tool

Published online by Cambridge University Press:  22 February 2011

J. L. Regolini ,
J. Margail ,
C. Morin  and
P. Gouy-Pailler
J. L. Regolini
Affiliation:
FRANCE TELECOM - CNET/CNS, BP 98, 38243 Meylan, FRANCE
J. Margail
Affiliation:
CEA-LETI, Av. des Martyrs 85, 38041 Grenoble, FRANCE
C. Morin
Affiliation:
FRANCE TELECOM - CNET/CNS, BP 98, 38243 Meylan, FRANCE
P. Gouy-Pailler
Affiliation:
FRANCE TELECOM - CNET/CNS, BP 98, 38243 Meylan, FRANCE
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Abstract

Integrated processes for IC manufacturing are today of prime importance for obtaining such high performance results as uniformity on large diameter wafers, reproducibility, throughput and reliability. Using an industrial integrated cluster reactor we have obtained selective epitaxial Si and selective TiSi2 deposition. This is a 200 mm reactor in which epitaxial silicon has been obtained with <1% (1σ) thickness uniformity and <2% over a 25 wafer batch. Full selectivity of Si on oxide has been obtained below a 20 Torr working pressure using the DCS/H2 gas system. No loading effect has been detected. The main characteristics of this system are described with the most relevant results like: sharp interfaces obtained in Si0.7Ge0.3/Si multilayer structures grown at 650°C, abruptly doped epitaxial layers and residual defect density.

TiSi2 has been selectively obtained with minimum substrate consumption using the H2/SiH4 (or DCS)/TiC14 chemistry. The elevated source & drain has also been successfully tested by selective Si epitaxy followed by “in situ” selective TiSi2 deposition to compensate for substrate consumption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 249
Copyright
Copyright © Materials Research Society 1994

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References

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