Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-06-26T20:29:10.738Z Has data issue: false hasContentIssue false
  • English
  • Français

Selective Epitaxial Growth Followed by in Situ Deposition of a- or Poly-Si for Seeded Soi.

Published online by Cambridge University Press:  28 February 2011

L. Karapiperis ,
G. Garry  and
D. Dieumegard
L. Karapiperis
Affiliation:
Laboratoire Central de Recherches Thomson-CSF, B.P. 10, 91401 – ORSAY CEDEX, France.
G. Garry
Affiliation:
Laboratoire Central de Recherches Thomson-CSF, B.P. 10, 91401 – ORSAY CEDEX, France.
D. Dieumegard
Affiliation:
Laboratoire Central de Recherches Thomson-CSF, B.P. 10, 91401 – ORSAY CEDEX, France.
Get access

Abstract

Selective Epitaxial Growth (SEG) techniques find a growing number of applications in the field of Si IC's, such as, lateral isolation, vertical interconnects, seeded recrystallisation etc. In the present work, the use of Si SEG by CVD combined with in-situ deposition of a- or poly-Si for the improvement of SOI obtained by Zone Melting Recrystallisation (ZMR) or by Lateral Solid Phase Epitaxy (SPE) is described. The principle application for which the present work is intended is Three Dimentional (3D) Integration. One of the main constraints imposed on process is thermal compatibility with previously executed process steps. Hence the need to reduce the thermal budget for the Selective Epitaxial Growth as much as possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 231
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 REGOLINI, J.L., DUTARTRE, D., BENSAHEL, D., KARAPIPERIS, L., GARRY, G., DIEUMEGARD, D., Electron. Lett. 23, 493 (1987).Google Scholar
2 WILLIAMS, D.A., McMAHON, R.A., AHMED, H., KARAPEPERIS, L., GARRY, G., DIEUMEGARD, D., BARFOOT, K.M., GODFREY, D.J., These Proceedings.Google Scholar
3 CHAPUIS, D., GRIS, Y., MONROY, A., MACKOWIAK, E., MONTIER, M., REGOLINI, J.L., BENSAHEL, D., MERMET, J.L., ACHARD, H., BONO, H., JOLY, J.P., KARAPIPERIS, L., GARRY, G., DIEUMEGARD, D., BARFOOT, K.M., FIELD, M., HOPPER, G.F., GODFREY, D.J., SMITH, D.A., WILLIAMS, D.A., Mc MAHON, R.A. – AHMED, H., CAHILL, CG., DUNNE, B., O'FLANAGAN, S., MATHEWSON, A., LANE, W.A., in ESPRIT'87, achievements and Impact, Part. 1, edited by the Commission of European Communities (4tn annual ESPRIT Conference, Brussels, 1987).Google Scholar
4 KARAPIPERIS, L., GARRY, G., DIEUMEGARD, D., ESPRIT Project N° 245 1985 Annual Report, 1986.Google Scholar
5 ISHITANI, A., KITAJIMA, H., TANNO, K., TSUYA, H., ENDO, N., KASAI, N., KUROGI, Y., Microelectronic Engineering, 4, 3 (1986).CrossRefGoogle Scholar
6 BORLAND, J.O., Solid State Technol. p. 141, Aug. 1985.Google Scholar
7 ISHIWARA, H., YAMAMOTO, N., FURUKAWA, S., TAMURA, M., TOKUYAMA, T., Appl. Phys. Lett. 43, 1028 (1983).Google Scholar
8 KUNII, Y., TABE, M., KAJIYAMA, K., J. Appl. Phys. 54 (5), 2847 (1983).Google Scholar