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Selective Dynamical Study of Luminescences Near the Surface and the Interface of Epitaxial GaN

Published online by Cambridge University Press:  21 February 2011

L. Eckey ,
A. Hoffmann ,
R. Heitz ,
I. Broser ,
B.K. Meyer ,
T. Detchprohm ,
K. Hiramatsu ,
H. Amano  and
I. Akasaki
L. Eckey
Affiliation:
Technische Universität Berlin, Hardenberstraße 36, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Technische Universität Berlin, Hardenberstraße 36, 10623 Berlin, Germany
R. Heitz
Affiliation:
Technische Universität Berlin, Hardenberstraße 36, 10623 Berlin, Germany
I. Broser
Affiliation:
Technische Universität Berlin, Hardenberstraße 36, 10623 Berlin, Germany
B.K. Meyer
Affiliation:
Technische Universität Munchen, Germany
T. Detchprohm
Affiliation:
Nagoya University, Nagoya, Japan
K. Hiramatsu
Affiliation:
Nagoya University, Nagoya, Japan
H. Amano
Affiliation:
Meijo University, Nagoya, Japan
I. Akasaki
Affiliation:
Meijo University, Nagoya, Japan
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Abstract

Recombination processes and their dynamics are selectively studied (a) near the interface betweeen a 400μm thick GaN epilayer and its Al2O3 substrate and (b) in the structurally relaxed regions near the surface of this sample. Strong radiative excitonic recombination is observed in the relaxed regions. However, the recombination dynamics of free and shallow-bound excitons here are strongly influenced by shallow and deep defects. Near the substrate the presence of dislocations suppresses radiative recombination of free and shallow bound excitons. Deeper emissions appear which we attribute to excitons deeply bound to dislocation-related defects. They exhibit ps-recombination dynamics effected by strong nonradiative contributions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 589
Copyright
Copyright © Materials Research Society 1996

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References

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