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Selective Crystallization of A-Si:H Films on Glass

Published online by Cambridge University Press:  15 February 2011

Aiguo Yin  and
Stephen J. Fonash
Aiguo Yin
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
Stephen J. Fonash
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802.
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Abstract

We have found that an oxygen plasma exposure of a-Si:H films can cause these films to crystallize with a much lower thermal-budget than that required for the same a-Si:H films without this plasma exposure. Based on this unique finding, a selective area crystallization process has been developed to successfully form patterned polycrystalline Si films. In this study, 1500 Å PECVD a-Si:H films were first covered by 500 Å sputtered SiO2 which was then patterned by lithography to form various islands covered by the SiO2. These patterned films were exposed to an oxygen plasma and were then thermally annealed in a furnace at 600 °C for 6 hours. After this annealing it was found that the islands covered by SiO2 during the oxygen plasma treatment remained a-Si while the oxygen plasma exposed regions were crystallized completely. Both XRD and TEM were used to establish the existance of these controlled regions of a-Si and poly-Si in these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 683
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Ditizio, R. A., Uu, G., and Fonash, S. J., Appl. Phys. lett. 56 (2), 1140 (1990)Google Scholar
2. Milliadis, K. H., J. Appl. Phys. 63, 2260 (1988)Google Scholar
3. Kakkad, R., Smith, J., Lau, W. S., and Fonash, S. J., J. Appl. Phys. 65 (5), 2069 (1989),Google Scholar
4. Liu, Gang and Fonash, S. J., Jap. J. Appl. Phys. 30 (2B), L269 (1991)Google Scholar
5. Liu, Gang and Fonash, S. J., Appl. Phys. Lett. 62 (20), 2554 (1993),Google Scholar
6. Kakkad, R., Liu, Gang and Fonash, S. J., J. of Non-Crystalline Solids 115 (1989),Google Scholar
7. Yin, Aiguo and Fonash, S. J., presented at the 40th AVS conference (unpublished),Google Scholar
8. Harbeke, C., Polycrystalline Semiconductors. Physical Properties and Applications (Spinger, Berlin, 1985)Google Scholar