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Selective Area Heteroepitaxy of Nano-AlGaN UV Excitation Sources for Biofluorescence Application

Published online by Cambridge University Press:  01 February 2011

Vibhu Jindal ,
James Grandusky ,
Fatemeh Shahedipour-Sandvik ,
Steven LeBoeuf ,
Joleyn Balch  and
Todd Tolliver
Vibhu Jindal
Affiliation:
vjindal@uamail.albany.eduState University of New York-AlbanyCollege of Nanoscale Science & EngineeringRm. 219, 255 Fuller Rd.Albany NY 12203United States
James Grandusky
Affiliation:
jgrandusky@uamail.albany.edu, State University of New York-Albany, College of Nanoscale Science & Engineering, Rm. 219, 255 Fuller Rd., Albany, NY, 12203, United States
Fatemeh Shahedipour-Sandvik
Affiliation:
SShahedipour@uamail.albany.edu, State University of New York-Albany, College of Nanoscale Science & Engineering, Rm. 219, 255 Fuller Rd., Albany, NY, 12203, United States
Steven LeBoeuf
Affiliation:
LeBoeuf@research.ge.com, General Electric, Global Research Center, Niskayuna, NY, 12309, United States
Joleyn Balch
Affiliation:
Balch@research.ge.com, General Electric, Global Research Center, Niskayuna, NY, 12309, United States
Todd Tolliver
Affiliation:
Tolliver@research.ge.com, General Electric, Global Research Center, Niskayuna, NY, 12309, United States
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Abstract

We report on the selective area heteroepitaxy and facet evolution of AlGaN nanostructures on GaN/sapphire substrate using various mask materials. We also report on the challenges associated with selection of an appropriate mask material for selective area heteroepitaxy of AlGaN with varying Al composition. The shape and the growth rate of the nanostructures are observed to be greatly affected by the mask material. The evolution of the AlGaN nanostructures and Al incorporation were studied exhaustively as a function of growth parameters; including temperature, pressure, NH3 flow, total alkyl flow and TMAl/(TMAl+TMGa) ratio. The growth rate of nanostructures was reduced drastically when higher Al percentage AlGaN nanostructures were grown. The growth rates were increased for higher Al percentage AlGaN using a surfactant which resulted in a high quality pyramidal structure. As indicated by high resolution x-ray diffraction (XRD) and cathodoluminescence (CL) spectroscopy, composition of Al in the AlGaN nanostructure is significantly different from that of a thin film grown under the same growth conditions.

Keywords

III-Vmetalorganic depositionnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 916: Symposium DD – Solid-State Lighting Materials and Devices , 2006 , 0916-DD05-03
Copyright
Copyright © Materials Research Society 2006

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