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Selective Area Etching of GaN and AlGaN by Thermally Chemical Reaction in Hydrogen Ambient

Published online by Cambridge University Press:  10 February 2011

K. Hiramatsu ,
H. Matsushima ,
H. Hanai  and
N. Sawaki
K. Hiramatsu
Affiliation:
Mie University, Department of Electrical and Electronic Engineering 1515 Kamihama-cho, Tsu, Mie 514, Japan
H. Matsushima
Affiliation:
Nagoya University, Department of Electronics Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
H. Hanai
Affiliation:
Nagoya University, Department of Electronics Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
N. Sawaki
Affiliation:
Nagoya University, Department of Electronics Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
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Abstract

The selective area etching of wurtzite GaN (0001) and AlGaN (0001) with SiO2 masks is investigated for different temperatures of 800 to 1 100°C and different ambient gases of H2, N2 and Ar including NH3. The etching rate of GaN increases with increasing annealing temperature under H2 ambient. This etching is attributed to the chemical reaction between Ga-N and H2. On the other hand, the etching of GaN does not occur in the N2 or Ar ambient gas. The NH3 gas in H2 ambient suppresses the chemical reaction, while the NH3 gas in N2 enhances it. The surface etching of Al0.1Ga0.9N is not observed even in H2 ambient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 991
Copyright
Copyright © Materials Research Society 1998

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References

1. Morimoto, Y., J. Electrochem. Soc. 121, 1382 (1974).10.1149/1.2401694Google Scholar
2. Sun, C. J., Kung, P., Saxler, A., Ohsato, H., Bigan, E., and Razeghi, M., J. Appl. Phys. 76, 236 (1994).10.1063/1.357133Google Scholar
3. Koukitu, A., Takahashi, N., Taki, T. and Seki, H., J. Crystal Growth 170, 306 (1997).10.1016/S0022-0248(96)00535-0Google Scholar
4. Kato, Y., Kitamura, S., Hiramatsu, K., and Sawaki, N., J. Crystal Growth 144, 133 (1994).10.1016/0022-0248(94)90448-0Google Scholar
5. Kitamura, S., Hiramatsu, K., and Sawaki, N., Jpn. J. Appl. Phys., 34, L1184 (1995).10.1143/JJAP.34.L1184Google Scholar
6. Tanaka, H. and Nakadaira, A., Proc. 2nd Int. Conf. on Nitride Semicond. (Tokushima, 1997), p. 282.Google Scholar
7. Groh, R., Gerey, G., Bartha, L., and Pankove, J. I., Phys. Stat. Sol. (A) 26, 353 (1974).10.1002/pssa.2210260137Google Scholar