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Secondary Grain Growth During Rapid Thermal Annealing of Doped Polysilicon Films

Published online by Cambridge University Press:  28 February 2011

R. C. Cammarata ,
C. V. Thompson  and
S. M. Garrison
R. C. Cammarata
Affiliation:
Department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,MA 02139
C. V. Thompson
Affiliation:
Department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,MA 02139
S. M. Garrison
Affiliation:
Department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,MA 02139
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Abstract

Recently there has been a great deal of interest in the use of thin (≤0.1µm) heavily doped polysilicon films as diffusion sources for shallow junctions in silicon substrates. It has been reported that grain growth and solid phase epitaxy occur during annealing of such films and that the apparent rates of both are much greater during rapid thermal annealing. We report similar grain growth behavior for rapid thermal annealed thin polysilicon films deposited onto amorphous SiO2. Based on these experimental results we propose that solid phase homoepitaxy in polysilicon films occurs via secondary grain growth. This process proceeds rapidly at first but slows down due to grain boundary drag. Rapid thermal annealing of polysilicon films provides a method for selectively utilizing the kinetic process that dominates for short times.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 335
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Tsaur, B.-Y. and Hung, L.S., Appl. Phys. Lett. 37, 648 (1980).Google Scholar
2. Natsuaki, N., Tamura, M., Miyazaki, T.,and Yanagi, Y., IEEE Intern. Elec. Device Meet., Dec. 1983, p. 662.Google Scholar
3. Wong, C.Y., Michel, A.E., Isaac, R.D., Kastl, R.H., and Mader, S.R., J. Appl. Phys. 55, 1131 (1984).Google Scholar
4. Tamura, M., Natsuaki, N., and Aoki, S., Jap. J. Appl. Phys, 24, L151 (1985).Google Scholar
5. Hoyt, J.L., Crabbe, E., Gibbons, J.F., and Pease, R.F.W., Appl. Phys. Lett. 50, 751 (1987).Google Scholar
6. Wada, Y. and Nishimatsu, S., J. Electrochem. Soc. 125, 1499 (1978).Google Scholar
7. Thompson, C.V., J. Appl. Phys. 58, 763 (1985).Google Scholar
8. Thompson, C.V. and Smith, Henry I., Appl. Phys. Lett. 44, 603 (1984).Google Scholar
9. Kim, H.-J. and Thompson, C.V., Appl. Phys. Lett. 48, 399 (1986).Google Scholar
10. Kim, H.-J. and Thompson, C.V., in Proceedings of the Fourth Japanese Institute of Metals International Symposium on Grain Boundary Structure and Related Phenomena (Japan Institute of Metals, Sendai, 1986) p. 495.Google Scholar
11. Garrison, S.M., , S.M. thesis, Massachusetts Institute of Technology (1986).Google Scholar
12. Garrison, S.M., Cammarata, R.C., Thompson, C.V., and Smith, Henry I., J. Appl. Phys. 61, 1652 (1987).Google Scholar