Hostname: page-component-77c89778f8-9q27g Total loading time: 0 Render date: 2024-07-20T22:18:01.590Z Has data issue: false hasContentIssue false
  • English
  • Français

Scattering and Absorption of Infrared Light on EL2 Clusters in GaAs Semi-Insulating Materials

Published online by Cambridge University Press:  25 February 2011

J. P. Fillard ,
M. Castagne ,
J. Bonnafe  and
P. Gall
J. P. Fillard
Affiliation:
Centre d'Electronique de Montpellier, Université des Sciences et Techniques du Languedoc, Pl. E. Bataillon, 34060 Montpellier Cedex, France.
M. Castagne
Affiliation:
Centre d'Electronique de Montpellier, Université des Sciences et Techniques du Languedoc, Pl. E. Bataillon, 34060 Montpellier Cedex, France.
J. Bonnafe
Affiliation:
Centre d'Electronique de Montpellier, Université des Sciences et Techniques du Languedoc, Pl. E. Bataillon, 34060 Montpellier Cedex, France.
P. Gall
Affiliation:
Centre d'Electronique de Montpellier, Université des Sciences et Techniques du Languedoc, Pl. E. Bataillon, 34060 Montpellier Cedex, France.
Get access

Abstract

It is known that dislocations and EL2 clusters participate in infrared transmission images. Optical quenching of the typical cell patterns at low temperature also charge EL2 with contributing to images. A point yet is not clearly established: such optical contrast could originate in a quantum absorption process or as well in a scattering of the photons. This paper aims at showing that both optical processes are likely to occur in most of the GaAs SI samples and that the two phenomenons can be considered as localy correlated. So monitoring EL2 center density by optical “absorption” could be a trap for the unwarry.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 231
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Gatos, H.C., Lagowski, J., Mat. Res. Soc. Symp. Proc. vol.46 (1985); p. 153–168.Google Scholar
[2] Taniguchi, M., Ikama, T., Appl. Phys. Lett. 45 (1984) 69.CrossRefGoogle Scholar
[3] Nanishi, Y., DRIP Proceedings, (1985) 225.Google Scholar
[4] Fillard, J.P., Defect Recognition and Image Processing in III-V Compounds, Ed. (1985) Elsevier.Google Scholar
[5] Brozel, M.R., Foulkes, E.J., Stirland, D.J., 11th Int. Symp. on GaAs and Relat. Comp., Biarritz (1984).Google Scholar
[6] Moriya, K., Ogawa, T., Jap. Jour. Appl. Phys. 22 L 207 (1983).Google Scholar
[7] Kuma, S., Otoki, Y., Kurata, K., DRIP Proceedings, 19 (1985).Google Scholar
[8] Castagne, M., Fillard, J.P., Bonnafe, J., Sol. St. Com. 7 653 (1985).Google Scholar
[9] Castagne, M., Bonnafe, J., Zhang, F., Fillard, J.P., DRIP Proceedings 35 (1985).Google Scholar
[10] Skolnick, M.S., Hope, Dao, Cockayne, B., Semi-insulating III-V Conf. Waun Spring (1984) (Shiva Ed.).Google Scholar
[11] Skolnick, M.S., to appear. Appl. Phys. Lett.Google Scholar
[12] Fillard, J.P., Bonnafe, J., M. Castagne Sol. St. Com. 52 859, (1984).Google Scholar
[13] Ogawa, T., to appear, Jap. Jour. Appl. Phys.Google Scholar