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Scanning Tunneling Microscope with a Field Ion Microscope

Published online by Cambridge University Press:  21 February 2011

T. Hashizume
Affiliation:
The Institute for Solid State Physics, The University of Tokyo, Minato-ku, Tokyo, Japan
I. Kamiya
Affiliation:
The Institute for Solid State Physics, The University of Tokyo, Minato-ku, Tokyo, Japan
Y. Hasegawa
Affiliation:
The Institute for Solid State Physics, The University of Tokyo, Minato-ku, Tokyo, Japan
T. Ide
Affiliation:
NEC Fundamental Research Laboratory, Miyamae-ku, Kawasaki, Japan
H. W. Pickering
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
T. Sakurai
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
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Abstract

A combined field ion (FIM) and scanning tunneling microscope (STM), which we call “FI-STM,” was designed and constructed with multiple surface analytical functions. The system is equipped with a LEED/AES system and a sputtering gun and/or heating devices for preparing and characterizing specimen surfaces. The field ion microscope (FIM) is operated at room temperature to observe the geometry of the STM scanning tip in-situ in the course of STM investigations. The instrument has been operated successfully by observing the structures of the graphite (0001), the Si (111) 7×7 and the Si (100) 2×1 surfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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