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Scanning Probe Investigations of Cleaved Heterostructure Layers

Published online by Cambridge University Press:  10 February 2011

J. L. Ebel ,
T. E. Schlesinger  and
M. L. Reed
J. L. Ebel
Affiliation:
Solid State Electronics Directorate, Wright Laboratory, Wright-Patterson AFB, OH 45433ebel@el.wpafb.af.mil
T. E. Schlesinger
Affiliation:
Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213
M. L. Reed
Affiliation:
Solid State Electronics Directorate, Wright Laboratory, Wright-Patterson AFB, OH 45433ebel@el.wpafb.af.mil
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Abstract

We present differential oxidation rate effects in cleaved heterostructures containing GaAs, AlGaAs, InGaP and InGaAs measured by atomic force microscopy (AFM). AFM images of the cleaved structures are presented, along with step height measurements at the different material interfaces. These height differences are the result of differences in oxidation rates of the heterostructure layers. The method used to extract the small step-height information from the images is also presented. Typical step heights range from about one to twenty angstroms for the structures measured. We have also observed steps which mimic the oxidation steps, but which are not related to the epitaxially grown material structure. However, in these cases images of both sides of the cleaved pieces show inverse (rather than similar) topographies. We also present results of digital etching techniques used to enhance the step heights based on the same differential oxidation mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 451: Symposium P – Electrochemical Synthesis and Modification , 1996 , 251
Copyright
Copyright © Materials Research Society 1997

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References

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