Hostname: page-component-84b7d79bbc-tsvsl Total loading time: 0 Render date: 2024-07-27T12:09:26.260Z Has data issue: false hasContentIssue false
  • English
  • Français

Rugged a-Si:H TFTs on Plastic Substrates

Published online by Cambridge University Press:  15 February 2011

H. Gleskovas ,
S. Wagner  and
Z. Suo
H. Gleskovas
Affiliation:
Princeton University, Department of Electrical Engineering, and Aerospace Engineering and Princeton Materials Institute, Princeton, NJ 08544
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, and Aerospace Engineering and Princeton Materials Institute, Princeton, NJ 08544
Z. Suo
Affiliation:
Princeton University, Department of Mechanical and Aerospace Engineering and Princeton Materials Institute, Princeton, NJ 08544
Get access

Abstract

Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors (a-Si:H TFTs) made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics. At R= 0.5 mm the channel area of the TFTs is strained by ~ 1%. The reduction in bending radius, from R ≠ 2 mm on steel foil of the same thickness, agrees with the theoretical prediction that changing from a stiff to a compliant substrate can reduce the bending strain in the device plane by a factor of up to 5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 653
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Parsons, G.N., Yang, C.S., Arthur, C.B., Klein, T.M., and Smith, L., in Flat Panel Display Materials - 1998, edited by Parsons, G.N., Tsai, C.C., Fahlen, T.S., and Seager, C.H., (Mat. Res. Soc. Symp. Proc. 508, Pittsburgh, PA, 1998), pp. 19–24.Google Scholar
2. Gleskova, H., Wagner, S. and Suo, Z., in Flat Panel Display Materials - 1998, edited by Parsons, G.N., Tsai, C.C., Fahlen, T.S., and Seager, C.H., (Mat. Res. Soc. Symp. Proc. 508, Pittsburgh, PA, 1998), pp. 73–78.Google Scholar
3. Sandoe, J.N., Digest of Technical Papers of the Society for Information Display, Vol. 29, 1998, pp. 293–296.Google Scholar
4. Lueder, E., Muecke, M., Polach, S., Proc. of the Int. Display Research Conf., Asia Display 98, 1998, pp. 173–177.Google Scholar
5. Constant, A., Bums, S.G., Shanks, H., Gruber, C., Landin, A., Schmidt, D., Thielen, C., Olympie, F., Schumacher, T., and Cobbs, J., The Electrochemical Society Proceedings, Vol. 94–35, pp. 392–400.Google Scholar
6. Bums, S.G., Shanks, H., Constant, A., Gruber, C., Schmidt, D., Landin, A., and Olympie, F., The Electrochemical Society Proceedings, Vol. 96–23, pp. 382–390.Google Scholar
7. Theiss, S. D., Carey, P. G., Smith, P.M., Wickboldt, P., Sigmon, T.W., Tung, Y.J., and King, T.-J., IEEE Int. Electron Devices Meeting 1998, Technical Digest, pp. 257–260.Google Scholar
8. Thomasson, D.B., Bonse, M., Huang, J.R., Wronski, C.R., and Jackson, T.N., IEEE Int. Electron Devices Meeting 1998, Technical Digest, pp. 253–256.Google Scholar
9. Suo, Z., Ma, E.Y., Gleskova, H., and Wagner, S., Appl. Phys. Lett. 74, 1999, pp. 1177–1179.Google Scholar
10. Ma, E.Y. and Wagner, S., in Flat Panel Display Materials - 1998, edited by Parsons, G.N., Tsai, C.C., Fahlen, T.S., and Seager, C.H., (Mat. Res. Soc. Symp. Proc. 508, Pittsburgh, PA, 1998), pp. 13–18.Google Scholar