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Rta Implant Monitor: Does it Tell the Truth?

Published online by Cambridge University Press:  21 February 2011

B. Lojek
B. Lojek*
Affiliation:
MOTOROLA Inc. assignee at SEMATECH 2706 Montopolis Drive Austin, TX 78741-6499
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Abstract

The measurement of the sheet resistance of Arsenic implanted layers is almost exclusively used for the monitoring of temperature nonuniformity of RTP equipment. However, as is shown in this contribution this technique relies on several averaging processes and a satisfactory uniformity of sheet resistance achieved on the implant monitor does not mean that the same performance will be achieved on the wafer with different optical properties. The sheet resistance uniformity is not the only the function of the processing temperature but also the function of the processing parameters such as annealing time, rate of heating and cooling, intensity of radiation and its spectral variation as well as function of the optical properties ofthe processed material. Impact of the substrate on the achieved results and processing dependence are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 237
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Lojek, B., The Behavior of Free-carriers During RTA of Doped Silicon, in: Rapid Thermal and Integrated Processing, ed. Gelpey, J.C., Green, M.L., Singh, R., Wortman, J.J., MRS Proc. Vol.224, 1991, p.33 Google Scholar
[2] Lojek, B., Emission of Radiation from Semiconductors: Processing Implications, SEMATECH Rapid Thermal Processing Workshop, Santa Clara, 1993 Google Scholar
[3] Lojek, B., Point Defect Behavior During RTA, Jap. J. Applied Physics, (accepted for publication), 1993 Google Scholar
[4] Lojek, B., Patent Pending, MOTOROLA Inc., 1993 Google Scholar