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Room-Temperature Lasing Characteristics of Zinc Sulfide Single Nanoribbons

Published online by Cambridge University Press:  21 March 2011

J. A. Zapien
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
Y. Jiang
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
X.-M. Meng
Affiliation:
Technical Institute of Physics and Chemistry, Beijing, China
W. Chen
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
Y. Lifshitz
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China On leave from Soreq NRC, Yavne 81800, Israel
S.-T. Lee
Affiliation:
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
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Abstract

We present a study of the photoluminescence and lasing characteristics of individual single-crystal zinc sulfide nanoribbons. We show that ZnS presents optical gain at the near band gap emission of ∼338 nm. Optical gain together with the optical cavity defined by the perfect crystallographic structure with a rectangular cross section results in lasing activity at optical pumping power densities of ∼ 50 kW/cm2. Small collection angle measurements show that nanoribbons form excellent optical cavities and gain medium with record (FWHM<0.1nm) lasing modes free of PL background. Large collection angles (as previously employed for nanowire measurements) add a broad, non-resonant PL component and obscure the original high-quality lasing of the nanowires/nanoribbons.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

1. Appeli, D., Nature 419, 553 (2002).Google Scholar
2. Johnson, J. C. et al. , J. Phys. Chem. B. 105, 11387 (2001).Google Scholar
3. Duan, X., Huang, Y., Agarwai, R., Lieber, C. M., Nature 421, 2451 (2003).Google Scholar
4. Huang, M. H., Mao, S., Feick, H, Yan, H., Wu, Y., Kind, H., Webber, E., Russo, R., Yang, P., Science 292, 1897 (2001).Google Scholar
5. Yan, H., Johnson, J., Law, M., He, R., Knutsen, K., McKinney, J.R., Pham, J., Saykally, R., Yang, P., Adv. Mat. 15, 1907 (2003)Google Scholar
6. Zapien, J. A. et al. Appl. Phys. Lett. 84, 1189 (2004).Google Scholar
7. Tran, T. K. et al. , J. Appl. Phys. 81, 2803 (1977).Google Scholar
8. Ong, H. C., Chang, R. P. H., Appl. Phys. Lett. 79, 3612 (2001).Google Scholar
9. Jiang, Y. et al. , Adv. Mater. 15, 323 (2003).Google Scholar
10. Adachi, S., Optical constants of crystalline and amorphous semiconductors; Kluwer, Boston, 1999.Google Scholar
11. Pankove, J. I., Optical processes in semiconductors, Dover, New York, 1971.Google Scholar
12. Svelto, O., Principles of Lasers; Plenum Press, New York, 1998.Google Scholar