Hostname: page-component-7479d7b7d-wxhwt Total loading time: 0 Render date: 2024-07-10T22:14:40.753Z Has data issue: false hasContentIssue false
  • English
  • Français

Room-temperature Ferromagnetic Zn0.95Co0.05O Diluted Magnetic Semiconducting Thin Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Yuebin Zhang ,
Qing Liu ,
Thirumany Sritharan ,
Chee-Lip Gan  and
Sean Li
Yuebin Zhang
Affiliation:
eybzhang@ntu.edu.sg, Nanyang Technological University, School of Materials Science and Engineering, Block 171 Stirling Road #14-1115, Singapore, Singapore, 140171, Singapore
Qing Liu
Affiliation:
LIUQ0003@ntu.edu.sg, Nanyang Technological University, School of Materials Science and Engineering, Singapore, 639798, Singapore
Thirumany Sritharan
Affiliation:
ASSRITHARAN@ntu.edu.sg, Nanyang Technological University, School of Materials Science and Engineering, Singapore, 639798, Singapore
Chee-Lip Gan
Affiliation:
CLGan@ntu.edu.sg, Nanyang Technological University, School of Materials Science and Engineering, Singapore, 639798, Singapore
Sean Li
Affiliation:
sean.li@unsw.edu.au, Nanyang Technological University, School of Materials Science and Engineering, Singapore, 639798, Singapore
Get access

Abstract

Co-doped ZnO thin films with room-temperature ferromagnetism have been successfully synthesized on (001) Si substrates at 450 °C by pulsed-laser deposition using a Zn0.95Co0.05O ceramic target. Their microstructural properties are carefully studied using atomic force microscopy, x-ray diffraction and high-resolution transmission electron microscopy. The oxidation state of Co and the ratio of Co/Zn are examined by x-ray photoelectron spectroscopy, and magnetic measurements are performed using SQUID. The results show that a single-phase crystalline Co-doped ZnO film was grown with (002) preferential orientation and some edge dislocations formed during the film growth. The origin of room-temperature ferromagnetism is explored. The presence of nanoclusters of any magnetic phase can be ruled out. The dislocations, coupled with oxygen vacancy, may contribute to the ferromagnetic properties in the much diluted magnetic semiconductor.

Keywords

spintroniclaser ablationferromagnetic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG05-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Prellier, W., Fouchet, A., and Mercey, B., J. Phys.: Condens. Matter 15, R1583 (2003).Google Scholar
2. Pearton, S.J., Heo, W.H., Ivill, M., Norton, D.P., and Steiner, T., Semicond. Sci. Technol. 19, R59 (2004).Google Scholar
3. Joseph, M., Tabata, H., and Kawai, T., Japan. J. Appl. Phys. 38, L1205 (1999).Google Scholar
4. Sato, K. and Katayama-Yoshida, H., Japan. J. Appl. Phys. 39, L555 (2000).Google Scholar
5. Sato, K. and Katayama-Yoshida, H., Japan. J. Appl. Phys. 40, L334 (2001).Google Scholar
6. Ueda, K., Tabata, H., and Kawai, T., Appl. Phys. Lett. 79, 988 (2001).Google Scholar
7. Kim, J.H., Kim, H., Kim, D., Ihm, Y.E., and Choo, W.K., J. Appl. Phys. 92, 6066 (2002).Google Scholar
8. Prellier, W., Fouchet, A., Mercey, B., Simon, Ch., and Raveau, B., Appl. Phys. Lett. 82, 3490 (2003).Google Scholar
9. Ramachandran, S., Tiwari, A., and Narayan, J., Appl. Phys. Lett. 84, 5255 (2004).Google Scholar
10. Yan, L., Ong, C.K., and Rao, X.S., J. Appl. Phys. 96, 508 (2004).Google Scholar
11. Venkatesan, M., Fitzgerald, C.B., Lunney, J.G., and Coey, J.M.D., Phys. Rev. Lett. 93, 177206–1 (2004).Google Scholar
12. Lee, H.-J., Jeong, S.-Y., Cho, C.R., and Park, C.H., Appl. Phys. Lett. 81, 4020 (2002).Google Scholar
13. Moulder, J.F., Stickle, W.F., Sobol, P.E., and Bomben, K.D., in Handbook of X-ray Photoelectron Spectroscopy, edited by Chastain, J. and King, R.C. Jr, (Physical Electronics Inc., 1995), p. 82.Google Scholar
14. Schwartz, D.A. and Gamelin, D.R., Adv. Mater. 16, 2115 (2004).Google Scholar
15. Coey, J.M.D., Venkatesan, M., and Fitzgerald, C.B., Nature Mater. 4, 173 (2005).Google Scholar
16. Sluiter, M.H.F., Kawazoe, Y., Sharma, P., Inoue, A., Raju, A.R., Rout, C., and Waghmare, U.V., Phys. Rev. Lett. 94, 187204–1 (2005).Google Scholar