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Room Temperature Measurement of Photoluminescence Spectra of Semiconductors Using an Ft-Raman Spectrophotometer

Published online by Cambridge University Press:  22 February 2011

J. D. Webb ,
D. J. Dunlavy ,
T. Ciszek ,
R. K. Ahrenkiel ,
M. W. Wanlass ,
R. Noufi  and
S. M. Vernon
J. D. Webb
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401
D. J. Dunlavy
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401
T. Ciszek
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401
R. K. Ahrenkiel
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401
M. W. Wanlass
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401
R. Noufi
Affiliation:
National Renewable Energy Laboratory (NREL), Golden, CO 80401
S. M. Vernon
Affiliation:
Spire Corporation, Bedford, MA 01730
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Abstract

This paper demonstrates the utility of a Fourier transform (FT) Raman spectrophotometer in obtaining the room-temperature photoluminescence (PL) spectra of semiconductors used in photovoltaic and electro-optical devices. Sample types analyzed by FT-PL spectroscopy included bulk silicon and films of copper indium diselenide (CuInSej), gallium indium arsenide (GaInAs), indium phosphide arsenide, (InPAs), and gallium arsenide-germanium alloy (GaAsGe) on various substrates. The FTIR-PL technique exhibits advantages in speed, sensitivity, and freedom from stray light over conventional dispersive methods, and can be used in some cases to characterize complete semiconductor devices as well as component materials at room temperature. Recent innovations that improve the spectral range of the technique and eliminate instrumental spectral artifacts are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 233
Copyright
Copyright © Materials Research Society 1994

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