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Room Temperature Emission from Erbium Nanoparticles Embedded in a Silicon Matrix

Published online by Cambridge University Press:  15 February 2011

A. Thilderkvist ,
J. Michel ,
S.-T. Ngiam ,
L. C. Kimerling  and
K. D. Kolenbrander
A. Thilderkvist
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
J. Michel
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
S.-T. Ngiam
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
L. C. Kimerling
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
K. D. Kolenbrander
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Strong room temperature photoluminescence emission from thin films of Er nanoparticles embedded in a matrix of silicon is reported. The Er nanoparticles were produced by a pulsed laser ablation supersonic expansion technique. After a heat treatment at 500°C in an Ar-atmosphere, intense Er-related luminescence appears at λ = 1.54 gim, characteristic of intra-4f emission from Er3÷. Only a 50% reduction in photoluminescence intensity is observed as the temperature increases from 4 K to 300 K. A photocarrier mediated process is responsible for the excitation of the optically active Er-centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 265
Copyright
Copyright © Materials Research Society 1996

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