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The Role of Vertical Exchange in the Growth of GaAs/AlAs Lateral and Vertical Superlattices

Published online by Cambridge University Press:  15 February 2011

Axel Lorke ,
Mohan Krishnamurthy  and
Pierre M. Petroff
Axel Lorke
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, USA
Mohan Krishnamurthy
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, USA
Pierre M. Petroff
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, USA
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Abstract

We report on the formation of lateral superlattices in short period vertical GaAs/AlAs superlattices. To explain the observed self-organized phase separation, we propose a model of vertical intermixing, driven by the exchange of Ga on the surface with impinging Al atoms. The model correctly describes the formation of lateral superlattices for both integer and fractional monolayer deposition. It also predicts a far-reaching intermixing at GaAs-AlAs interfaces. Insitu RHEED studies of the initial growth stage of both GaAs-AlAs and AlAs-GaAs interfaces support the assumption of an asymmetric exchange at the growing surface and confirm the longrange Ga migration predicted by the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 65
Copyright
Copyright © Materials Research Society 1993

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