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Role of the Interface in the Adhesion of Cu to SiO2

Published online by Cambridge University Press:  22 February 2011

Andrew J. Kellock  and
John E.E. Baglin
Andrew J. Kellock
Affiliation:
IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120-6099
John E.E. Baglin
Affiliation:
IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120-6099
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Abstract

The adhesion of thin evaporated Cu films directly to SiO2 is generally poor. The adhesion can be improved by a variety of treatments, ranging from a pre-deposition Ar ion bombardment of the substrate, to post deposition bombardments with ion beams, photons or electrons. Also, if a thin layer of partially oxidized Cr is deposited onto the SiO2 prior to Cu deposition, the Cu adheres more strongly. The intrinsic mechanism responsible for these adhesion improvements remains to be understood.

We have attempted to characterize the interface of these structures by a combination of Rutherford Backscattering Spectrometry (RBS) and an adhesion peel test to determine the role each treatment plays in the adhesion process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 153: Symposium J – Interfaces Between Polymers, Metals, and Ceramics , 1989 , 391
Copyright
Copyright © Materials Research Society 1989

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