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A Role of the Built-in Piezoelectric Field in InGaN/AlGaN/GaN Multiple Quantum Wells in the Electroferlectance Experiments

Published online by Cambridge University Press:  01 February 2011

Pavel Bokov ,
Lev Avakyants ,
Mansur Badgutdinov ,
Anatoly Chervyakov ,
Stanislav Shirokov ,
Alexander Yunovich ,
Elena Vasileva ,
Feodor Snegov ,
Dmitry Bauman  and
Boris Yavich
Pavel Bokov
Affiliation:
pavel_bokov@rambler.ru, M.V. Lomonosov Moscow State University, Physics faculty, Leninskie gory 1 building 2, Moscow, 119992, Russian Federation
Lev Avakyants
Affiliation:
lpamail@gmail.com, M.V. Lomonosov Moscow State University, Physics faculty, Leninskie gory 1 building 2, Moscow, 119992, Russian Federation
Mansur Badgutdinov
Affiliation:
mansurbadgutdinov@gmail.com, M.V. Lomonosov Moscow State University, Physics faculty, Leninskie gory 1 building 2, Moscow, 119992, Russian Federation
Anatoly Chervyakov
Affiliation:
acher@genphys.phys.msu.ru, M.V. Lomonosov Moscow State University, Physics faculty, Leninskie gory 1 building 2, Moscow, 119992, Russian Federation
Stanislav Shirokov
Affiliation:
stas.shirokov@gmail.com, M.V. Lomonosov Moscow State University, Physics faculty, Leninskie gory 1 building 2, Moscow, 119992, Russian Federation
Alexander Yunovich
Affiliation:
yunovich@phys.msu.ru, M.V. Lomonosov Moscow State University, Physics faculty, Leninskie gory 1 building 2, Moscow, 119992, Russian Federation
Elena Vasileva
Affiliation:
vasileva@mail.ru, 2JSC “Svetlana-Optoelectronica”, Saint-Petersburg, N/A, Russian Federation
Feodor Snegov
Affiliation:
fsneg@mail.ru, 2JSC “Svetlana-Optoelectronica”, Saint-Petersburg, N/A, Russian Federation
Dmitry Bauman
Affiliation:
db@mail.ru, 2JSC “Svetlana-Optoelectronica”, Saint-Petersburg, N/A, Russian Federation
Boris Yavich
Affiliation:
yavich@gmail.com, 2JSC “Svetlana-Optoelectronica”, Saint-Petersburg, N/A, Russian Federation
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Abstract

The influence of built in piezoelectric field in the light-emitting diodes based on InGaN/AlGaN/GaN heterostructures on the electroreflectance spectra have been studied. The structures were grown by MOCVD technology and «flip-chip» mounted. Light was emitted or reflected through sapphire substrate. The built in electric field in the structure was modulated by pulses of reverse bias from -6 to +1 V applied to the contacts of diode. Observed blue shift of spectral line from InGaN/GaN multiply quantum wells region with the increasing reverse bias voltage has been explained as the result of lowering of the electric field in the quantum well.

Keywords

III-Vsemiconductingoptical
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q07-10
Copyright
Copyright © Materials Research Society 2008

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