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Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

S. B. Ogale ,
M. Thomsen  and
A. Madhukar
S. B. Ogale
Affiliation:
Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241
M. Thomsen
Affiliation:
Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241
A. Madhukar
Affiliation:
Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241
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Abstract

Computer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 83
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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