Hostname: page-component-5c6d5d7d68-xq9c7 Total loading time: 0 Render date: 2024-08-16T21:27:11.599Z Has data issue: false hasContentIssue false
  • English
  • Français

Role of Photodegradation on the \x03C4;Product and Microstructure of the a-Si:H Pin Devices

Published online by Cambridge University Press:  01 January 1993

M. Vieira ,
E. Fortunato ,
G. Lavareda ,
C.N. Carvalho  and
R. Martins
M. Vieira
Affiliation:
FCT-UNL/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, PORTUGAL
E. Fortunato
Affiliation:
FCT-UNL/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, PORTUGAL
G. Lavareda
Affiliation:
FCT-UNL/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, PORTUGAL
C.N. Carvalho
Affiliation:
FCT-UNL/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, PORTUGAL
R. Martins
Affiliation:
FCT-UNL/UNINOVA, Quinta da Torre, 2825 Monte da Caparica, PORTUGAL
Get access

Abstract

PIN solar cells were light soaked up to 60 hours. The cell characteristics, the optoelectronic properties and the microstructure parameter (R=I2100/I2100+I2000) as well as the hydrogen content (CH) and density of states (g(Ef)) of the active i-layer were monitored throughout the entire light induced degradation process and compared with the correspondents μτ product (for both carriers) inferred through steady photoconductivity and FST measurements.

Data show a strong correlation between the decrease of μτ product for electron and the increase of the fraction of hydrogen bonded on internal surfaces (R increases from 0.1 to 0.4) suggesting structural changes during the light induced defects' formation. For holes, the μτ product remains approximately constant and only dependent on the initial hydrogen content. As g(Ef) increases, μτ presents an asymmetrical decrease showing that electrons are more sensitive to defects' growth than holes.

We also observe that the rate of degradation is faster for samples having the lowest defect densities, R and CH, showing that the amount of degradation is not a simple function of the photon exposure (Gt product) but also depends on the material microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 637
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Fortmann, C. M., Lange, S., Hicks, M., Wronski, C. R.,J. Appl. Phys., Vol. 64, No. 8, p. 4219 (1988).Google Scholar
2 Redfield, D., Bube, R. H., Proc. of 22th IEEE Photovoltaic Conference, p. 1319 Las Vegas (1991).Google Scholar
3 Steabler, D.L and Wronski, C.R.S, Appl. Phys. Letters 31, p.292 (1977).Google Scholar
4 Wang, F., Schwartz, R., J. Appl. Physics, 71 (2), p.791 (1992).Google Scholar
5 Carlson, D. E., Appl. Phys. A 41, p. 305 (1986).Google Scholar
6 Gleason, K. K., Petrich, M. A. and Reimer, J. A., Phys. Rev. B 36, p. 3259 (1987).Google Scholar
7 Okamoto, H., Kida, H., Nonomura, S., Hamakawa, Y., Sollar cells 8, p. 317 (1983).Google Scholar
8 Vieira, M., Martins, R., Fortunato, E. and Guimaraes, L., J. of Non Cryst. Sol. 137&138, p.479 (1991).Google Scholar
9 Martins, R., Guimaraes, L., Fortunato, E., Santos, M. and Ferreira, I., Proc. 8 tn EPVSEC, p. 653 (1988).Google Scholar
10 Martins, R., Vieira, M., Fortunato, E. and Guimaraes, L., Proc. PVSEC-5, p. 975, Kyoto (1990).Google Scholar
11 Brodsky, H.H., Cardona, M. and Cuomo, J. J., Phys. Rev., B16, p.3556 (1977).Google Scholar
12 Sauvin, E., Shah, A., Hubin, J., Pipoz, P., J.of Non. Crys. Solids 137&138, p.475 (1991).CGoogle Scholar
13 Shah, A.V., Hubin, J., Technical Digest, 5th PVSEC Conference, p. 821, Kyoto (1990).Google Scholar
14 Fischer, D., Pellaton, N., Keppner, H., Shah, A., Fortmant, C. M.,Proc. of MRS, 258, p.887 (1992)Google Scholar