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Role of Nanopipes in Degradation of AlGaN/InGaN/GaN Devices Operating at High Voltage

Published online by Cambridge University Press:  10 February 2011

Marek Osiński ,
Jinhyun Lee  and
Daniel L. Barton
Marek Osiński
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106, osinski@chtm.unm.edu
Jinhyun Lee
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106, osinski@chtm.unm.edu
Daniel L. Barton
Affiliation:
Also with Sandia National Laboratories, Albuquerque, New Mexico 87185-1081, bartondl@sandia.gov
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Abstract

We argue that the nanopipes recently observed in device-quality GaN grown on sapphire play an important role in degradation of nitride-based devices requiring high driving voltage, such as diode lasers or high-power electronics. The nanopipes offer a preferential path for the top (p-side) contact metal to migrate down towards the p-n junction under high-voltage operation, eventually causing a short and device failure. The metal migration process is enhanced by high voltage (tens of volts) required to drive high-current pulses through the device, and its elimination is of critical importance for achieving reliable GaN-based power devices and diode lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 205
Copyright
Copyright © Materials Research Society 1998

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References

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