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Role of Inelastic Electron-Phonon Scattering in Ultra-Scaled Phase Change Material Nanostructures

Published online by Cambridge University Press:  14 July 2014

Jie Liu ,
Xu Xu  and
M. P. Anantram
Jie Liu
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA
Xu Xu
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA
M. P. Anantram
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA
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Abstract

The electron transport properties of ultra-scaled amorphous phase change material (PCM) GeTe are studied using non-equilibrium Green’s function (NEGF). The inelastic electron-phonon scattering is included using Born approximation. It is shown that, in ultra-scaled PCM device with 6 nm channel length, less than 4% of the energy carried by the incident electrons from the source is transferred to the atomic lattice before reaching the drain, indicating that the electron transport is largely elastic. Our simulation results show that the inelastic electron-phonon scattering, which plays an important role to excite trapped electrons in bulk PCM devices, exerts very limited influence on the current density value and the shape of current-voltage curve of ultra-scaled PCM devices. The analysis reveals that the Poole-Frenkel law and the Ohm’s law, which are the governing physical mechanisms of the bulk PCM devices, cease to be valid in the ultra-scaled PCM devices.

Keywords

amorphousdevicesthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1697: Symposium HH – Phase-Change Materials for Memory, Reconfigurable Electronics and Cognitive Applications , 2014 , mrss14-1697-hh03-07
Copyright
Copyright © Materials Research Society 2014 

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References

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