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Role of Hydrogen in Silicon Nitride Films Prepared by Various Deposition Techniques

Published online by Cambridge University Press:  26 February 2011

J. Kanicki
J. Kanicki*
Affiliation:
IBM Research Division Thomas J. Watson Research Center P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

Different properties of hydrogenated amorphous silicon nitride films, prepared by various deposition techniques, are reported in this paper. Special attention has been devoted to the influence of film stoichiometry and hydrogen content on these properties. It has been established that the hydrogen can influence the physical, chemical, mechanical, and magnetic properties of the N-rich film. However, for a given film stoichiometry there is no clear evidence for the hydrogen content influence on optical and electrical properties; the film stoichiometry provides the main influence on these properties. The best quality gate dielectric silicon nitride is N-rich film deposited at temperatures exceeding 350°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 671
Copyright
Copyright © Materials Research Society 1988

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References

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