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The Role of Hydrogen for Disordered Silicon

Published online by Cambridge University Press:  01 February 2011

N. H. Nickel
N. H. Nickel*
Affiliation:
Hahn-Meitner-Institut Berlin, Kekuléstr. 5, D-12489 Berlin, Germany.
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Abstract

The properties of hydrogen in disordered silicon are of great interest due to its beneficial and deleterious aspects. This paper highlights some of the manifold properties of hydrogen in silicon. The influence of dopants on hydrogen diffusion in poly-Si, laser-induced dehydrogenation and crystallization of amorphous silicon, and hydrogen bonding in a-Si:H, poly-Si, and c-Si are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A1.5
Copyright
Copyright © Materials Research Society 2002

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