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The Role of Arsine in Reducing Carbon in Triethylarsenic Grown GaAs Films

Published online by Cambridge University Press:  28 February 2011

D.M. Speckman  and
J.P. Wendt
D.M. Speckman
Affiliation:
The Aerospace Corporation, Electronics Research Laboratory, P.O. Box 92957, Los Angeles, CA 90009
J.P. Wendt
Affiliation:
The Aerospace Corporation, Electronics Research Laboratory, P.O. Box 92957, Los Angeles, CA 90009
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Abstract

Very high carbon impurity levels (1018-1021cm−3) in GaAs films grown using triethylarsenic (Et3As) and trimethylgallium (Me3Ga) can be dramatically reduced by substituting a portion of the Et3As reagent with arsine during growth. Gallium arsenide epilayers grown at a deposition temperature of 560°C, a total V/III ratio =10, and the Group V reagent consisting of a mixture of Et3As and arsine, were found to exhibit carbon levels of only 5-7×1015cm−3for Group V mixtures ranging from 0-65% Et3As. All of these films were n-type, except for those grown using 100% arsine, which were p-type. The reduction in carbon incorporation in films grown using Et3As and arsine as co-reagents is shown to result from a unique, synergistic, reaction chemistry involving the two arsenic reagents. In particular, the decomposition of arsine to provide carbon-free, active arsenic fragments for growth is greatly enhanced by the presence of Et3As as a co-reactant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 193
Copyright
Copyright © Materials Research Society 1989

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References

1.For a recent review, see: Stringfellow, G.B., J. Electron. Mat. 17 327 (1988).CrossRefGoogle Scholar
2. Speckman, D.M. and Wendt, J.P., Appl. Phys. Lett. 50, 676 (1987); in Epitaxy of Semiconductor Layered Structures edited by R.T. Tung, L.R. Dawson, and R.L. Gunshor (Mater. Res. Soc. Proc. 102, Pittsburgh, PA 1987) pp. 187–190.Google Scholar
3. Speckman, D.M. and Wendt, J.P., J. Cryst. Growth 93 29 (1988).Google Scholar