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Rocking-Curve Peak Shift in Thin Heterojunction Single Layers

Published online by Cambridge University Press:  28 February 2011

C.R. Wie ,
Y-W. Choi ,
H.M. Kim ,
J.F. Chen ,
T. Vreeland  and
C.-J. Tsai
C.R. Wie
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
Y-W. Choi
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
H.M. Kim
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
J.F. Chen
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, NY 14260
T. Vreeland
Affiliation:
California Institute of Technology, Dept. of Materials Science, Pasadena, CA 91125
C.-J. Tsai
Affiliation:
California Institute of Technology, Dept. of Materials Science, Pasadena, CA 91125
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Abstract

A simple method for determining layer composition and mismatch of semiconductor hetero-epitaxial samples is by measuring the separation of peaks in x-ray rocking curve (XRC). This method fails if the peak separation is affected by other factors. For a small layer thickness, the layer peak position is affected by the x-ray amplitudes of the substrate or other thicker layers through the interference and overlap effects. In this case, a diffraction theory fitting process is necessary for a correct determination of layer parameters. We have used dynamical and kinematical x-ray diffraction theories to calculate the layer peak position as a function of its thickness for various layer/substrate combinations. These two theories yield substantially different results, indicating that the kinematical diffraction theory analysis is no longer valid for these thin layers. When a thick layer is present along with the thin layer, the thick layer is more influential than the substrate to the thin layer peak position, making the dynamical theory fitting necessary even from higher thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 487
Copyright
Copyright © Materials Research Society 1989

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References

1. Estop, E., Izrael, A., and Sauvage, M., Acta Crystallogr. A 32, 627 (1976).Google Scholar
2. Fewster, P.F. and Curling, C.J., J. Appl. Phys. 62, 4154 (1987).CrossRefGoogle Scholar
3. Speriosu, V.S., Appl. Phys. 52, 6094 (1981).Google Scholar
4. Wie, C.R., Tombrello, T.A., and Vreeland, T. Jr, J. Appl. Phys. 59, 3743 (1986).Google Scholar
5. Wie, C.R., Kim, H.M., and Lau, K.M., SPIE Proc. 877, 41 (1988).Google Scholar
6. Halliwell, M. A. G., Lyons, M.H., and Hill, M.J., J. Cryst. Growth 68, 523 (1984).Google Scholar
7. Jeong, J., Schlesinger, T.E., and Milnes, A.G., J. Cryst. Growth, 87, 265 (1988).Google Scholar
8. Takagi, S., Acta Crystallogr. 15, 1311 (1962).Google Scholar
9. Taupin, D., Bull. Soc. Frac. Miner. Crystallogr. 87, 469 (1964).Google Scholar
10. Wie, C.R., Ph.D. Thesis, California Institute of Technology, 1985.Google Scholar
11. Jenkins, F.A. and White, H.E., Fundamentals of Optics, 4th ed., (McGraw-Hill, 1976, NY), pp. 315–377.Google Scholar
12. Wie, C.R., J. Appl. Phys., submitted February 1989.Google Scholar
13. Wie, C.R., J. Appl. Phys. 65, 1036 (1989).Google Scholar
14. Wie, C.R., Mater. Res. Soc. Symp. Proc., this volume.Google Scholar
15. Chen, J.F. and Wie, C.R., J. Electr. Mater. 17, 501 (1988), and references therein.Google Scholar