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Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP

Published online by Cambridge University Press:  28 February 2011

C. Schietinger ,
B. Adams  and
C. Yarling
C. Schietinger
Affiliation:
Accufiber Division of Luxtron Corporation, 9550 SW Nimbus Avenue, Beaverton, OR 97005
B. Adams
Affiliation:
Accufiber Division of Luxtron Corporation, 9550 SW Nimbus Avenue, Beaverton, OR 97005
C. Yarling
Affiliation:
Process Products, 37 Flagship Drive, Andover, MA 01845
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Abstract

A novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 23
Copyright
Copyright © Materials Research Society 1991

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